A simple model for delta‐doped field‐effect transistor electronic states LM Gaggero‐Sager, R Pérez‐Alvarez Journal of applied physics 78 (7), 4566-4569, 1995 | 66 | 1995 |
Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si LM Gaggero-Sager, ME Mora-Ramos, DA Contreras-Solorio Physical Review B 57 (11), 6286, 1998 | 52 | 1998 |
Design of graphene electronic devices using nanoribbons of different widths GG Naumis, M Terrones, H Terrones, LM Gaggero-Sager Applied Physics Letters 95 (18), 2009 | 50 | 2009 |
Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells I Rodriguez-Vargas, LM Gaggero-Sager, VR Velasco Surface science 537 (1-3), 75-83, 2003 | 41 | 2003 |
The hydrostatic pressure effects on intersubband optical absorption of n-type δ-doped quantum well in GaAs O Oubram, O Navarro, LM Gaggero-Sager, JC Martínez-Orozco, ... Solid state sciences 14 (4), 440-444, 2012 | 34 | 2012 |
The spectrum of quasiregular heterostructures R Pérez-Alvarez, F Garcıa-Moliner Some Contemporary Problems of Condensed Matter Physics, 1-37, 2001 | 34* | 2001 |
Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems O Oubram, ME Mora-Ramos, LM Gaggero-Sager The European Physical Journal B 71, 233-236, 2009 | 33 | 2009 |
Subband and transport calculations in double n-type δ-doped quantum wells in Si I Rodriguez-Vargas, LM Gaggero-Sager Journal of applied physics 99 (3), 2006 | 31 | 2006 |
Self-similar conductance patterns in graphene Cantor-like structures H García-Cervantes, LM Gaggero-Sager, DS Díaz-Guerrero, ... Scientific Reports 7 (1), 617, 2017 | 30 | 2017 |
Electrical properties of Nb-doped PZT 65/35 ceramics: Influence of Nb and excess PbO JC M’Peko, AG Peixoto, E Jiménez, LM Gaggero-Sager Journal of electroceramics 15, 167-176, 2005 | 30 | 2005 |
Thomas-Fermi approximation in a tight-binding calculation of δ-doped quantum wells in GaAs S Vlaev, LM Gaggero-Sager Physical Review B 58 (3), 1142, 1998 | 27 | 1998 |
Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure JC Martínez‐Orozco, I Rodríguez‐Vargas, CA Duque, ME Mora‐Ramos, ... physica status solidi (b) 246 (3), 581-585, 2009 | 24 | 2009 |
White metal-like omnidirectional mirror from porous silicon dielectric multilayers AD Ariza-Flores, LM Gaggero-Sager, V Agarwal Applied Physics Letters 101 (3), 2012 | 21 | 2012 |
Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells LM Gaggero-Sager Modelling and Simulation in Materials Science and Engineering 9 (1), 1, 2001 | 21 | 2001 |
Electronic structure of delta-doped quantum well as a function of temperature LM Gaggero-Sager, R Pérez-Alvarez Applied physics letters 70 (2), 212-213, 1997 | 21 | 1997 |
Exchange Energy of a Hole Gas and the Thomas‐Fermi‐Dirac Approximation in p‐Type δ‐Doped Quantum Wells in Si and GaAs LM Gaggero‐Sager physica status solidi (b) 231 (1), 243-255, 2002 | 20 | 2002 |
Self-similar charge transmission in gapped graphene DS Díaz-Guerrero, I Rodríguez-Vargas, GG Naumis, LM Gaggero-Sager Fractals 24 (02), 1630002, 2016 | 18 | 2016 |
Self-consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature LM Gaggero-Sager, GG Naumis, MA Muñoz-Hernandez, V Montiel-Palma Physica B: Condensed Matter 405 (20), 4267-4270, 2010 | 18 | 2010 |
Exchange and correlation in the Thomas–Fermi approximation LM Gaggero‐Sager Journal of mathematical chemistry 25 (2), 317-320, 1999 | 18 | 1999 |
Self-similar transmission properties of aperiodic cantor potentials in gapped graphene R Rodríguez-González, I Rodríguez-Vargas, DS Díaz-Guerrero, ... The European Physical Journal B 89, 1-11, 2016 | 17 | 2016 |