| Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991 | 931 | 1991 |
| Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 681 | 1992 |
| Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ... Journal of applied physics 70 (5), 2672-2678, 1991 | 580 | 1991 |
| Light emission from silicon SS Iyer, YH Xie Science 260 (5104), 40-46, 1993 | 500 | 1993 |
| Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ... Physical Review B 52 (7), 4910, 1995 | 457 | 1995 |
| Luminescence and structural study of porous silicon films YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ... Journal of applied physics 71 (5), 2403-2407, 1992 | 423 | 1992 |
| Dimensions of luminescent oxidized and porous silicon structures S Schuppler, SL Friedman, MA Marcus, DL Adler, YH Xie, FM Ross, ... Physical review letters 72 (16), 2648, 1994 | 385 | 1994 |
| Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991 | 356 | 1991 |
| Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ... Physical Review Letters 73 (22), 3006, 1994 | 339 | 1994 |
| Very high mobility two‐dimensional hole gas in Si/GexSi1− x/Ge structures grown by molecular beam epitaxy YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson Applied physics letters 63 (16), 2263-2264, 1993 | 256 | 1993 |
| Surface morphology of related GexSi1−x films JWP Hsu, EA Fitzgerald, YH Xie, PJ Silverman, MJ Cardillo Applied physics letters 61 (11), 1293-1295, 1992 | 242 | 1992 |
| Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection P Wang, O Liang, W Zhang, T Schroeder, YH Xie Advanced Materials 25 (35), 4918-4924, 2013 | 241 | 2013 |
| Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995 | 228 | 1995 |
| Vertical graphene base transistor W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ... IEEE Electron Device Letters 33 (5), 691-693, 2012 | 185 | 2012 |
| Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie Analytical chemistry 87 (20), 10255-10261, 2015 | 182 | 2015 |
| Relaxed template for fabricating regularly distributed quantum dot arrays YH Xie, SB Samavedam, M Bulsara, TA Langdo, EA Fitzgerald Applied physics letters 71 (24), 3567-3568, 1997 | 176 | 1997 |
| Absorption and luminescence studies of free-standing porous silicon films YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ... Physical Review B 49 (8), 5386, 1994 | 157 | 1994 |
| Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors W Liu, BL Jackson, J Zhu, CQ Miao, CH Chung, YJ Park, K Sun, J Woo, ... Acs Nano 4 (7), 3927-3932, 2010 | 146 | 2010 |
| Na-Doped p-Type ZnO Microwires W Liu, F Xiu, K Sun, YH Xie, KL Wang, Y Wang, J Zou, Z Yang, J Liu Journal of the American Chemical Society 132 (8), 2498-2499, 2010 | 145 | 2010 |
| Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 144 | 1993 |
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTU在 mit.edu 的电子邮件经过验证
