| Strain engineering and epitaxial stabilization of halide perovskites Y Chen, Y Lei, Y Li, Y Yu, J Cai, MH Chiu, R Rao, Y Gu, C Wang, W Choi, ... Nature 577 (7789), 209-215, 2020 | 482 | 2020 |
| A fabrication process for flexible single-crystal perovskite devices Y Lei, Y Chen, R Zhang, Y Li, Q Yan, S Lee, Y Yu, H Tsai, W Choi, ... Nature 583 (7818), 790-795, 2020 | 321 | 2020 |
| High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered- W Choi, O Seok, H Ryu, HY Cha, KS Seo IEEE Electron Device Letters 35 (2), 175-177, 2013 | 127 | 2013 |
| Controlled homoepitaxial growth of hybrid perovskites Y Lei, Y Chen, Y Gu, C Wang, Z Huang, H Qian, J Nie, G Hollett, W Choi, ... Advanced Materials 30 (20), 1705992, 2018 | 88 | 2018 |
| Improvement of Instability in Normally-Off GaN MIS-HEMTs Employing as an Interfacial Layer W Choi, H Ryu, N Jeon, M Lee, HY Cha, KS Seo IEEE Electron Device Letters 35 (1), 30-32, 2013 | 79 | 2013 |
| Si complies with GaN to overcome thermal mismatches for the heteroepitaxy of thick GaN on Si A Tanaka, W Choi, R Chen, SA Dayeh Advanced Materials 29 (38), 1702557, 2017 | 66 | 2017 |
| High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha IEEE Electron Device Letters 34 (3), 354-356, 2013 | 63 | 2013 |
| Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors NH Lee, M Lee, W Choi, D Kim, N Jeon, S Choi, KS Seo Japanese Journal of Applied Physics 53 (4S), 04EF10, 2014 | 38 | 2014 |
| Vertical ZnO nanotube transistor on a graphene film for flexible inorganic electronics H Oh, JB Park, W Choi, H Kim, Y Tchoe, A Agrawal, GC Yi Small 14 (17), 1800240, 2018 | 31 | 2018 |
| Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates A Tanaka, W Choi, R Chen, R Liu, WM Mook, KL Jungjohann, PKL Yu, ... Journal of Applied Physics 125 (8), 2019 | 30 | 2019 |
| Intrinsically linear transistor for millimeter-wave low noise amplifiers W Choi, R Chen, C Levy, A Tanaka, R Liu, V Balasubramanian, ... Nano Letters 20 (4), 2812-2820, 2020 | 24 | 2020 |
| Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs W Choi, H Ryu, N Jeon, M Lee, NH Lee, KS Seo, HY Cha 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 12 | 2014 |
| LUPIS: Latch-up based ultra efficient processing in-memory system J Sim, M Imani, W Choi, Y Kim, T Rosing 2018 19th International Symposium on Quality Electronic Design (ISQED), 55-60, 2018 | 10 | 2018 |
| Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz W Choi, V Balasubramanian, PM Asbeck, SA Dayeh 2020 Device Research Conference (DRC), 1-2, 2020 | 5 | 2020 |
| High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2 W Choi, H Ryu, O Seok, M Kim, HY Cha, KS Seo CS MANTECH Conference, 149-152, 2014 | 4 | 2014 |
| Strain Engineered Crack-Free GaN on Si for Integrated Vertical High Power GaN Devices with Si CMOS S Dayeh, A Tanaka, W Choi, R Chen ECS Transactions 75 (8), 711, 2016 | 2 | 2016 |
| Fully recessed Schottky barrier diodes with a digital etching on AlGaN/GaN heterostructures N Jeon, W Choi, H Ryu, HY Cha, KS Seo Proc. Int. Conf. Solid State Devices Mater, 142-143, 2013 | 2 | 2013 |
| Current-sensing efficient adder for processing-in-memory design J Sim, M Imani, W Choi, Y Kim, T Rosing 10th Annual Non-Volatile Memories Workshop, 2019 | 1 | 2019 |
| Novel Gallium Nitride Transistor Architectures for Wireless Communications and Power Electronics W Choi University of California, San Diego, 2020 | | 2020 |
| The Effects of SF6 Plasma and in-situ N2 Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs NH Lee, W Choi, M Lee, S Choi, KS Seo CS MANTECH Conference, Denver, Colorado, USA, 2014 | | 2014 |
