| Thermo-mechanical characterization of Au-In transient liquid phase bonding die-attach BJ Grummel, ZJ Shen, HA Mustain, AR Hefner IEEE Transactions on components, packaging and manufacturing technology 3 (5 …, 2013 | 41 | 2013 |
| Design consideration of high temperature SiC power modules B Grummel, R McClure, L Zhou, AP Gordon, L Chow, ZJ Shen 2008 34th Annual Conference of IEEE Industrial Electronics, 2861-2866, 2008 | 34 | 2008 |
| 10 kV SiC BJTs—Static, switching and reliability characteristics S Sundaresan, S Jeliazkov, B Grummel, R Singh 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 30 | 2013 |
| Short circuit robustness of 1200 V SiC switches R Singh, B Grummel, S Sundaresan 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 18 | 2015 |
| Reliability study of Au-In transient liquid phase bonding for SiC power semiconductor packaging B Grummel, HA Mustain, ZJ Shen, AR Hefner 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 17 | 2011 |
| Rapidly maturing SiC junction transistors featuring current gain (β)> 130, blocking voltages up to 2700 V and stable long-term operation SG Sundaresan, S Jeliazkov, B Grummel, R Singh Materials Science Forum 778, 1001-1004, 2014 | 16 | 2014 |
| High temperature high power module design for wide bandgap semiconductors: Packaging architecture and materials considerations ZJ Shen, B Grummel, R McClure, A Gordon, A Hefner Proc. IMAPS HiTEC, 170-176, 2008 | 10 | 2008 |
| Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers S Sundaresan, S Jeliazkov, H Issa, B Grummel, R Singh 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 9 | 2014 |
| Reliability Characterization of Au–In Transient Liquid Phase Bonding Through Electrical Resistivity Measurement BJ Grummel, HA Mustain, ZJ Shen, JC Elmes, AR Hefner IEEE Transactions on Components, Packaging and Manufacturing Technology 5 …, 2015 | 8 | 2015 |
| Switching and robustness analysis of 10 kV SiC BJTs R Singh, S Jeliazkov, B Grummel, S Sundaresan 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 5 | 2015 |
| Comparison of energy losses in high-current 1700 V switches S Sundaresan, B Grummel, R Singh 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 5 | 2015 |
| Silicon carbide high-temperature packaging module fabrication W Brokaw, J Elmes, B Grummel, ZJ Shen, TX Wu The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 178-181, 2013 | 5 | 2013 |
| Current Gain Stability of SiC Junction Transistors subjected to long-duration DC and Pulsed Current Stress SG Sundaresan, B Grummel, R Singh Materials Science Forum 858, 929-932, 2016 | 4 | 2016 |
| Improvement of the current gain stability of SiC junction transistors SG Sundaresan, B Grummel, D Hamilton, R Singh Materials Science Forum 821, 822-825, 2015 | 4 | 2015 |
| Design and characterization of high temperature packaging for wide-bandgap semiconductor devices B Grummel | 4 | 2012 |
| Comparison of Au-In transient liquid phase bonding designs for SiC power semiconductor device packaging B Grummel, HA Mustain, ZJ Shen, AR Hefner Additional Papers and Presentations 2011 (HITEN), 000077-000083, 2011 | 2 | 2011 |
| High Temperature, High Power Module Design for Wide Bandgap Semiconductors: Packaging Architecture and Materials Considerations AR Hefner Jr, ZJ Shen, R McClure, A Gordon, B Grummel Allen R. Hefner Jr., ZJ Shen, Ryan McClure, Ali Gordon, Brian Grummel, 2008 | 2 | 2008 |
| High temperature packaging for wide bandgap semiconductor devices B Grummel | 2 | 2008 |
| Short circuit robustness of 1200 v SiC junction transistors and power MOSFETs SG Sundaresan, B Grummel, R Singh Materials Science Forum 858, 807-811, 2016 | 1 | 2016 |
| Phase Leg Power Module with SiC MIDSJT Devices. S Atcitty, S Sundaresan, S Jeliazkov, H Issa, B Grummel, R Singh Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2014 | | 2014 |
Siddarth SundaresanGeneSiC Semiconductor, George Mason University在 genesicsemi.com 的电子邮件经过验证
Siddarth SundaresanGeneSiC Semiconductor, George Mason University在 genesicsemi.com 的电子邮件经过验证