受强制性开放获取政策约束的文章 - Gunwu Ju了解详情
无法在其他位置公开访问的文章：3 篇
Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE
S Kang, GW Ju, JW Min, DS Lee, YT Lee, HJ Kim, K Park
Japanese Journal of Applied Physics 57 (12), 120306, 2018
强制性开放获取政策： US Department of Energy
Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy
K Park, S Ravindran, GW Ju, JW Min, S Kang, NS Myoung, SY Yim, YR Jo, ...
Current Applied Physics 16 (12), 1622-1626, 2016
强制性开放获取政策： US Department of Energy
Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by metal–organic vapor phase epitaxy
S Kang, HJ Choi, EK Kang, GW Ju, JW Min, YT Lee, DS Lee, K Park, ...
Japanese Journal of Applied Physics 57 (8), 080311, 2018
强制性开放获取政策： US Department of Energy
可在其他位置公开访问的文章：1 篇
Strong emission of THz radiation from GaAs microstructures on Si
I Maeng, G Lee, C Kang, GW Ju, K Park, SB Son, YT Lee, CS Kee
AIP Advances 8 (12), 2018
强制性开放获取政策： US Department of Energy
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