| Raman and X‐ray photoelectron spectroscopy investigation of the effect of gamma‐ray irradiation on MoS2 B Ozden, MP Khanal, J Park, S Uprety, V Mirkhani, K Yapabandara, K Kim, ... Micro & Nano Letters 12 (4), 271-274, 2017 | 25 | 2017 |
| Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) MP Khanal, S Uprety, V Mirkhani, S Wang, K Yapabandara, E Hassani, ... Journal of Applied Physics 124 (21), 2018 | 22 | 2018 |
| Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors MP Khanal, B Ozden, K Kim, S Uprety, V Mirkhani, K Yapabandara, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 21 | 2017 |
| On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO V Mirkhani, K Yapabandara, S Wang, MP Khanal, S Uprety, MS Sultan, ... Thin Solid Films 672, 152-156, 2019 | 15 | 2019 |
| Influence of magnetic field strength on nanoparticle growth in a capacitively-coupled radio-frequency Ar/C2H2 discharge L Couëdel, D Artis, MP Khanal, C Pardanaud, S Coussan, S LeBlanc, ... Plasma Research Express 1 (1), 015012, 2019 | 9 | 2019 |
| Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location K Yapabandara, V Mirkhani, S Wang, MP Khanal, S Uprety, ... Microelectronics Reliability 91, 262-268, 2018 | 9 | 2018 |
| Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si B Ozden, C Yang, F Tong, MP Khanal, V Mirkhani, MH Sk, AC Ahyi, ... Applied Physics Letters 105 (17), 2014 | 9 | 2014 |
| Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures S Wang, V Mirkhani, K Yapabandara, R Cheng, G Hernandez, MP Khanal, ... Journal of Applied Physics 123 (16), 2018 | 8 | 2018 |
| Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements B Ozden, MP Khanal, S Youn, V Mirkhani, K Yapabandara, M Park, ... ECS Journal of Solid State Science and Technology 5 (4), P3206, 2016 | 8 | 2016 |
| High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors V Mirkhani, S Wang, K Yapabandara, MS Sultan, MP Khanal, S Uprety, ... Semiconductor Science and Technology 36 (10), 105011, 2021 | 7 | 2021 |
| Spectroscopic photo I–V diagnostics of nitride‐based high electron mobility transistor structures on Si wafers F Tong, K Yapabandara, CW Yang, M Khanal, C Jiao, M Goforth, B Ozden, ... Electronics letters 49 (24), 1547-1548, 2013 | 7 | 2013 |
| Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers K Yapabandara, V Mirkhani, MS Sultan, B Ozden, MP Khanal, M Park, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 6 | 2017 |
| The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, MP Khanal, ... Solid-State Electronics 191, 108270, 2022 | 4 | 2022 |
| Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers B Ozden, MP Khanal, V Mirkhani, K Yapabandara, C Yang, S Ko, S Youn, ... Journal of Nanoscience and Nanotechnology 16 (7), 7630-7634, 2016 | 4 | 2016 |
| Enhancement of electrical characteristics of a‐ZTO TFTs based on channel layers produced with alternating precursor concentration S Uprety, D Hanggi, K Yapabandara, V Mirkhani, MP Khanal, B Schoenek, ... Electronics Letters 54 (22), 1298-1300, 2018 | 2 | 2018 |
| Gamma-ray irradiation effect on sol-gel derived zinc tin oxide thin film transistors S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, M Khanal, ... APS March Meeting Abstracts 2018, T60. 120, 2018 | 1 | 2018 |
| Enhancement of the electrical characteristics of thin-film transistors with multi-stack zinc tin oxide channel layers produced with 2 different solution concentrations S Uprety, S Wang, D Hanggi, K Yapabandara, V Mirkhani, M Khanal, ... APS March Meeting Abstracts 2018, T60. 047, 2018 | 1 | 2018 |
| The Influence of Passivation Layer Thickness on Radiation Hardness of ZnO Thin Film Transistors Subjected to Proton Irradiation. K Yapabandara, V Mirkhani, S Wang, M Khanal, S Uprety, T Isaacs-Smith, ... APS March Meeting Abstracts 2018, L15. 010, 2018 | 1 | 2018 |
| 197P Treatment patterns and clinical outcomes of patients with unresectable advanced or metastatic (UAM) gastric/gastroesophageal junction adenocarcinoma (GA/GEJA) in China: A … Y Zhang, J Zhang, X Xie, W Pan, G Wang, Q Dong, N Zhang, J Dong, ... Annals of Oncology 34, S1551, 2023 | | 2023 |
| EP07. 04-15 Diagnosis, Treatment Patterns and Outcomes in Patients with RET Fusion-Positive Non-Small Cell Lung Cancer (NSCLC) in China S Lu, L Shen, Q Wang, H Chen, Y Zhao, Y Li, G Segall, Y Dyachkova, ... Journal of Thoracic Oncology 18 (11), S550-S551, 2023 | | 2023 |
