受强制性开放获取政策约束的文章 - Osamu Nakatsuka (中塚 理)了解详情
无法在其他位置公开访问的文章：13 篇
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
强制性开放获取政策： Research Foundation (Flanders)
Ge1− xSnx stressors for strained-Ge CMOS
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
Solid-State Electronics 60 (1), 53-57, 2011
强制性开放获取政策： Research Foundation (Flanders)
Development of epitaxial growth technology for Ge1− xSnx alloy and study of its properties for Ge nanoelectronics
O Nakatsuka, Y Shimura, W Takeuchi, N Taoka, S Zaima
Solid-state electronics 83, 82-86, 2013
强制性开放获取政策： Research Foundation (Flanders)
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge (001) substrates
Y Shimura, S Takeuchi, O Nakatsuka, B Vincent, F Gencarelli, T Clarysse, ...
Thin Solid Films 520 (8), 3206-3210, 2012
强制性开放获取政策： Research Foundation (Flanders)
Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping
Y Peng, H Lai, C Liu, J Gao, M Kurosawa, O Nakatsuka, T Takeuchi, ...
Applied Physics Letters 117 (5), 2020
强制性开放获取政策： 国家自然科学基金委员会
GeSn technology: Impact of Sn on Ge CMOS applications
S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ...
ECS Transactions 41 (7), 231, 2011
强制性开放获取政策： Research Foundation (Flanders)
Silicon-based low-dimensional materials for thermal conductivity suppression: Recent advances and new strategies to high thermoelectric efficiency
H Lai, Y Peng, J Gao, M Kurosawa, O Nakatsuka, T Takeuchi, L Miao
Japanese Journal of Applied Physics 60 (SA), SA0803, 2020
强制性开放获取政策： 国家自然科学基金委员会
Reinforcement of power factor in N-type multiphase thin film of Si1− x− yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity
H Lai, Y Peng, J Gao, H Song, M Kurosawa, O Nakatsuka, T Takeuchi, ...
Applied Physics Letters 119 (11), 2021
强制性开放获取政策： 国家自然科学基金委员会
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
ECS Transactions 33 (6), 529, 2010
强制性开放获取政策： Research Foundation (Flanders)
Crystalline and optoelectronic properties of Ge1− x Sn x/high-Si-content-Si y Ge1− x− y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy
S Zhang, S Shibayama, O Nakatsuka
Semiconductor Science and Technology 38 (1), 015018, 2022
强制性开放获取政策： Japan Science and Technology Agency
Lattice-matched growth of high-Sn-content (x∼ 0.1) Si1− x Sn x layers on Si1− y Ge y buffers using molecular beam epitaxy
K Fujimoto, M Kurosawa, S Shibayama, M Sakashita, O Nakatsuka
Applied Physics Express 16 (4), 045501, 2023
强制性开放获取政策： Japan Science and Technology Agency
Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1− x− y Si x Sn y epitaxial layers grown on GaAs (001)
M Kurosawa, M Nakata, T Zhan, M Tomita, T Watanabe, O Nakatsuka
Japanese journal of applied physics 61 (8), 085502, 2022
强制性开放获取政策： Japan Science and Technology Agency
Formation of ultra-thin Ge1− xSnx/Ge1− x− ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode
GR Suwito, M Fukuda, E Suprayoga, M Ohtsuka, EH Hasdeo, ...
Applied Physics Letters 117 (23), 2020
强制性开放获取政策： Luxembourg National Research Fund
可在其他位置公开访问的文章：7 篇
Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer
C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98 (19), 2011
强制性开放获取政策： Research Foundation (Flanders)
Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation
Y Peng, L Miao, J Gao, C Liu, M Kurosawa, O Nakatsuka, S Zaima
Scientific reports 9 (1), 14342, 2019
强制性开放获取政策： 国家自然科学基金委员会
Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region
Y Peng, L Miao, C Liu, H Song, M Kurosawa, O Nakatsuka, SY Back, ...
Advanced Energy Materials 12 (2), 2103191, 2022
强制性开放获取政策： 国家自然科学基金委员会
Sn diffusion during Ni germanide growth on Ge1–xSnx
J Demeulemeester, A Schrauwen, O Nakatsuka, S Zaima, M Adachi, ...
Applied Physics Letters 99 (21), 2011
强制性开放获取政策： Research Foundation (Flanders)
No external load measurement strategy for micro thermoelectric generator based on high-performance Si1− x− yGexSny film
Y Peng, S Zhu, H Lai, J Gao, M Kurosawa, O Nakatsuka, S Tanemura, ...
Journal of Materiomics 7 (4), 665-671, 2021
强制性开放获取政策： 国家自然科学基金委员会
Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering
Y Peng, L Miao, C Li, R Huang, D Urushihara, T Asaka, O Nakatsuka, ...
Japanese Journal of Applied Physics 57 (1S), 01AF03, 2017
强制性开放获取政策： 国家自然科学基金委员会
Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact
Y Deng, D He, Y Qiu, R Gu, J He, O Nakatsuka
Applied Physics Letters 113 (25), 2018
强制性开放获取政策： 国家自然科学基金委员会
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