| High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high insulator systems K Kobayashi, M Yabashi, Y Takata, T Tokushima, S Shin, K Tamasaku, ... Applied physics letters 83 (5), 1005-1007, 2003 | 422 | 2003 |
| Growth and applications of GeSn-related group-IV semiconductor materials S Zaima, O Nakatsuka, N Taoka, M Kurosawa, W Takeuchi, M Sakashita Science and technology of advanced materials 16 (4), 043502, 2015 | 218 | 2015 |
| Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method S Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A Sakai Applied physics letters 92 (23), 2008 | 163 | 2008 |
| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC R Konishi, R Yasukochi, O Nakatsuka, Y Koide, M Moriyama, M Murakami Materials Science and Engineering: B 98 (3), 286-293, 2003 | 131 | 2003 |
| Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Epilayers Grown on Ge(111) K Hamaya, H Itoh, O Nakatsuka, K Ueda, K Yamamoto, M Itakura, ... Physical review letters 102 (13), 137204, 2009 | 117 | 2009 |
| Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates O Nakatsuka, N Tsutsui, Y Shimura, S Takeuchi, A Sakai, S Zaima Japanese Journal of Applied Physics 49 (4S), 04DA10, 2010 | 114 | 2010 |
| Low temperature growth of Ge1− xSnx buffer layers for tensile–strained Ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima Thin Solid Films 518 (6), S2-S5, 2010 | 109 | 2010 |
| Growth and structure evaluation of strain-relaxed Ge1− xSnx buffer layers grown on various types of substrates S Takeuchi, A Sakai, K Yamamoto, O Nakatsuka, M Ogawa, S Zaima Semiconductor science and technology 22 (1), S231, 2006 | 99 | 2006 |
| High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization W Takeuchi, N Taoka, M Kurosawa, M Sakashita, O Nakatsuka, S Zaima Applied Physics Letters 107 (2), 2015 | 84 | 2015 |
| Pure-edge dislocation network for strain-relaxed SiGe∕ Si (001) systems A Sakai, N Taoka, O Nakatsuka, S Zaima, Y Yasuda Applied Physics Letters 86 (22), 2005 | 71 | 2005 |
| Improvement in NiSi/Si contact properties with C-implantation O Nakatsuka, K Okubo, A Sakai, M Ogawa, Y Yasuda, S Zaima Microelectronic Engineering 82 (3-4), 479-484, 2005 | 69 | 2005 |
| Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC O Nakatsuka, T Takei, Y Koide, M Murakami Materials Transactions 43 (7), 1684-1688, 2002 | 67 | 2002 |
| Tensile strained Ge layers on strain-relaxed Ge1− xSnx/virtual Ge substrates S Takeuchi, A Sakai, O Nakatsuka, M Ogawa, S Zaima Thin Solid Films 517 (1), 159-162, 2008 | 64 | 2008 |
| Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers M Kurosawa, M Kato, T Yamaha, N Taoka, O Nakatsuka, S Zaima Applied Physics Letters 106 (17), 2015 | 62 | 2015 |
| Control of Sn precipitation and strain relaxation in compositionally step-graded Ge1-xSnx buffer layers for tensile-strained ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima Japanese Journal of Applied Physics 48 (4S), 04C130, 2009 | 54 | 2009 |
| Growth of Ge1− xSnx heteroepitaxial layers with very high Sn contents on InP (001) substrates M Nakamura, Y Shimura, S Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 520 (8), 3201-3205, 2012 | 51 | 2012 |
| Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe (C) contacts S Zaima, O Nakatsuka, A Sakai, J Murota, Y Yasuda Applied surface science 224 (1-4), 215-221, 2004 | 51 | 2004 |
| Crystalline orientation dependence of electrical properties of Mn Germanide/Ge (1 1 1) and (0 0 1) Schottky contacts T Nishimura, O Nakatsuka, S Akimoto, W Takeuchi, S Zaima Microelectronic engineering 88 (5), 605-609, 2011 | 50 | 2011 |
| Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 49 | 2011 |
Masashi KUROSAWANagoya University在 nagoya-u.jp 的电子邮件经过验证
