| Development of white and monochromatic X‐ray topography system in SAGA‐LS K Ishiji, S Kawado, Y Hirai physica status solidi (a) 208 (11), 2516-2521, 2011 | 33 | 2011 |
| Determination of observable depth of dislocations in 4H-SiC by X-ray topography in back reflection K Ishiji, S Kawado, Y Hirai, S Nagamachi Japanese Journal of Applied Physics 56 (10), 106601, 2017 | 23 | 2017 |
| Interface structures and magnetic properties of exchanged-coupled Co/Cu multilayers sputter-grown on Ta buffers K Ishiji, H Hashizume Japanese journal of applied physics 45 (5R), 4187, 2006 | 16 | 2006 |
| Magnetic polarization of Cu layers in exchange-coupled multilayers K Ishiji, H Hashizume, Y Suzuki, E Tamura Physical Review B—Condensed Matter and Materials Physics 74 (17), 174432, 2006 | 14 | 2006 |
| Structures of submonatomic Sn layers in Fe/Cr (Sn) Cr magnetic multilayers determined by anomalous x-ray scattering measurements K Ishiji, H Okuda, H Hashizume, M Almokhtar, N Hosoito Physical Review B 66 (1), 014443, 2002 | 10 | 2002 |
| Characterization of defect structure in epilayer grown on on-axis sic by synchrotron X-ray topography K Ishiji, M Kato, R Sugie Journal of Electronic Materials 51 (4), 1541-1547, 2022 | 8 | 2022 |
| Observation of phase transition of cesium manganese hexacyanoferrates by X-ray absorption spectroscopy K Ishiji, T Matsuda, H Tokoro, T Iwazumi, K Hashimoto, S Ohkoshi Journal of Physics and Chemistry of Solids 68 (11), 2158-2161, 2007 | 8 | 2007 |
| Expansion of beam width in exposure and crystal structure beamline (BL09) of SAGA-LS and applications using expanded beams K Ishiji, K Kobayashi, M Hidaka, H Taguchi, K Sakamoto, K Konishi, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022 | 7 | 2022 |
| Appearance of local strain fields and high electrical conductivity of macro-defects in P+-implanted 4H-SiC K Ishiji, S Kawado, Y Hirai, S Nagamachi Journal of Applied Physics 113 (19), 2013 | 7 | 2013 |
| Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing K Ishiji, R Ohtani, S Kawado, Y Hirai, S Nagamachi Semiconductor Science and Technology 26 (2), 025009, 2010 | 6 | 2010 |
| Correlation between crystal warpage and swelling of 4H-SiC through implantation and annealing K Ishiji, K Sato, T Fujii, T Araki, S Mouri, R Sugie Semiconductor Science and Technology 35 (10), 105008, 2020 | 5 | 2020 |
| Warpage structure of 4H-SiC after implantation and annealing processes K Ishiji, S Kawado, Y Hirai, S Nagamachi Materials Science Forum 858, 544-548, 2016 | 5 | 2016 |
| Influence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers K Ishiji, S Kawado, Y Hirai, S Nagamachi Materials Science Forum 778, 449-452, 2014 | 5 | 2014 |
| Observation of the Fixed Fe–CN–Mn Cluster in Cesium Manganese Hexacyanoferrate K Ishiji, M Deguchi, K Kawakami, N Nakajima, T Matsuda, H Tokoro, ... Journal of the Physical Society of Japan 79 (7), 074801, 2010 | 5 | 2010 |
| Observation of defect structure in ScAlMgO4 crystal using x-ray topography K Ishiji, T Fujii, T Araki, T Fukuda Journal of Crystal Growth 580, 126477, 2022 | 4 | 2022 |
| 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography K Ishiji, A Yoneyama, M Inaba, K Fukuda, A Sakaki, S Ohmagari, R Sugie Japanese Journal of Applied Physics 63 (2), 02SP25, 2024 | 2 | 2024 |
| Probing the magnetic polarizations of delocalized electrons in exchange-coupled Co/CuNi multilayers by X-ray magnetic circular dichroism measurements K Ishiji, H Yamasaki, T Masui, H Hashizume Journal of the Physical Society of Japan 74 (2), 753-757, 2005 | 2 | 2005 |
| Resistivity Measurement of P+-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain … K Ishiji, S Kawado, Y Hirai, S Nagamachi Materials Science Forum 1004, 272-277, 2020 | 1 | 2020 |
| Defect generation behavior in Czochralski-grown ScAlMgO4 crystal using synchrotron X-ray topography K Ishiji, T Fujii, T Araki, Y Shiraishi, T Fukuda Journal of Crystal Growth 603, 126984, 2023 | | 2023 |
