Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011 | 626 | 2011 |
20-meter underwater wireless optical communication link with 1.5 Gbps data rate C Shen, Y Guo, HM Oubei, TK Ng, G Liu, KH Park, KT Ho, MS Alouini, ... Optics express 24 (22), 25502-25509, 2016 | 325 | 2016 |
High-speed colour-converting photodetector with all-inorganic CsPbBr3 perovskite nanocrystals for ultraviolet light communication CH Kang, I Dursun, G Liu, L Sinatra, X Sun, M Kong, J Pan, P Maity, ... Light: Science & Applications 8 (1), 94, 2019 | 266 | 2019 |
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010 | 232 | 2010 |
Nanoscale Res LZ Liu, HL Gao, JJ Zhao, JP Lu Lett 5, 478, 2010 | 214* | 2010 |
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013 | 206 | 2013 |
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes H Zhao, G Liu, N Tansu Applied Physics Letters 97 (13), 2010 | 201 | 2010 |
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 2009 | 192 | 2009 |
III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010 | 180 | 2010 |
Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum wells light-emitting diodes G Liu, J Zhang, CK Tan, N Tansu IEEE Photonics Journal 5 (2), 2201011, 2013 | 148 | 2013 |
Light based underwater wireless communications HM Oubei, C Shen, A Kammoun, E Zedini, KH Park, X Sun, G Liu, ... Japanese Journal of applied physics 57 (8S2), 08PA06, 2018 | 136 | 2018 |
FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays P Zhu, G Liu, J Zhang, N Tansu Journal of Display Technology 9 (5), 317-323, 2013 | 114 | 2013 |
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes H Zhao, J Zhang, G Liu, N Tansu Applied Physics Letters 98 (15), 2011 | 113 | 2011 |
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters CK Tan, J Zhang, XH Li, G Liu, BO Tayo, N Tansu Journal of Display Technology 9 (4), 272-279, 2013 | 109 | 2013 |
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed TiO Microsphere Arrays XH Li, P Zhu, G Liu, J Zhang, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, ... Journal of Display Technology 9 (5), 324-332, 2013 | 96 | 2013 |
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime HP Zhao, GY Liu, XH Li, RA Arif, GS Huang, JD Poplawsky, ST Penn, ... IET optoelectronics 3 (6), 283-295, 2009 | 95 | 2009 |
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition H Tong, J Zhang, G Liu, JA Herbsommer, GS Huang, N Tansu Applied Physics Letters 97 (11), 2010 | 86 | 2010 |
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents J Zhang, H Tong, G Liu, JA Herbsommer, GS Huang, N Tansu Journal of Applied Physics 109 (5), 2011 | 81 | 2011 |
3.2 Gigabit-per-second visible light communication link with InGaN/GaN MQW micro-photodetector KT Ho, R Chen, G Liu, C Shen, J Holguin-Lerma, AA Al-Saggaf, TK Ng, ... Optics express 26 (3), 3037-3045, 2018 | 80 | 2018 |
Investigation of fast and slow decays in InGaN/GaN quantum wells G Sun, G Xu, YJ Ding, H Zhao, G Liu, J Zhang, N Tansu Applied Physics Letters 99 (8), 081104, 2011 | 64 | 2011 |