| Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ... Physical Review Letters 108 (19), 197203, 2012 | 318 | 2012 |
| Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications L Thomas, G Jan, J Zhu, H Liu, YJ Lee, S Le, RY Tong, K Pi, YJ Wang, ... Journal of Applied Physics 115 (17), 2014 | 268 | 2014 |
| Voltage-induced switching of nanoscale magnetic tunnel junctions JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ... 2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012 | 111 | 2012 |
| Angular Dependence of the Superconducting Transition Temperature<? format?> in Ferromagnet-Superconductor-Ferromagnet Trilayers J Zhu, IN Krivorotov, K Halterman, OT Valls Physical review letters 105 (20), 207002, 2010 | 103 | 2010 |
| Nonadiabatic stochastic resonance of a nanomagnet excited by spin torque X Cheng, CT Boone, J Zhu, IN Krivorotov Physical review letters 105 (4), 47202, 2010 | 98 | 2010 |
| Resonant nonlinear damping of quantized spin waves in ferromagnetic nanowires: a spin torque ferromagnetic resonance study CT Boone, JA Katine, JR Childress, V Tiberkevich, A Slavin, J Zhu, ... Physical review letters 103 (16), 167601, 2009 | 93 | 2009 |
| Origin of the inverse spin switch effect in superconducting spin valves J Zhu, X Cheng, C Boone, IN Krivorotov Physical review letters 103 (2), 27004, 2009 | 93 | 2009 |
| Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, RY Tong, K Pi, YJ Wang, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 75 | 2014 |
| Experimental test of an analytical theory of spin-torque-oscillator dynamics C Boone, JA Katine, JR Childress, J Zhu, X Cheng, IN Krivorotov Physical Review B—Condensed Matter and Materials Physics 79 (14), 140404, 2009 | 74 | 2009 |
| Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 71 | 2015 |
| High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory JM Iwata-Harms, G Jan, H Liu, S Serrano-Guisan, J Zhu, L Thomas, ... Scientific reports 8 (1), 14409, 2018 | 50 | 2018 |
| Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ... 2016 Ieee Symposium on Vlsi Technology, 1-2, 2016 | 36 | 2016 |
| Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ... 2018 IEEE Symposium on VLSI Technology, 65-66, 2018 | 34 | 2018 |
| Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM L Thomas, G Jan, S Le, YJ Lee, H Liu, J Zhu, S Serrano-Guisan, RY Tong, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2015 | 31 | 2015 |
| Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory JM Iwata-Harms, G Jan, S Serrano-Guisan, L Thomas, H Liu, J Zhu, ... Scientific reports 9 (1), 19407, 2019 | 30 | 2019 |
| Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing H Liu, YJ Lee, J Zhu, G Jan, R Tong, L Thomas US Patent 9,425,387, 2016 | 28 | 2016 |
| Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260° C MC Shih, CY Wang, YH Lee, W Wang, L Thomas, H Liu, J Zhu, YJ Lee, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 26 | 2016 |
| Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications H Liu, J Zhu, K Pi, RY Tong US Patent App. 14/278,243, 2015 | 25 | 2015 |
| Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) JM Iwata, G Jan, RY Tong, V Sundar, J Zhu, H Liu US Patent 10,665,773, 2020 | 19 | 2020 |
| STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes L Thomas, G Jan, S Serrano-Guisan, H Liu, J Zhu, YJ Lee, S Le, ... 2018 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2018 | 19 | 2018 |
