| Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques T Malinauskas, K Jarašiūnas, S Miasojedovas, S Juršėnas, B Beaumont, ... Applied physics letters 88 (20), 2006 | 62 | 2006 |
| Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives P Scajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, T Fujihara, ... The journal of physical chemistry letters 9 (12), 3167-3172, 2018 | 53 | 2018 |
| Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques P Ščajev, S Miasojedovas, A Mekys, D Kuciauskas, KG Lynn, SK Swain, ... Journal of Applied Physics 123 (2), 2018 | 46 | 2018 |
| Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy S Juršėnas, S Miasojedovas, G Kurilčik, A Žukauskas, PR Hageman Applied physics letters 83 (1), 66-68, 2003 | 45 | 2003 |
| Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites P Scajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, C Qin, ... The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017 | 40 | 2017 |
| A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI 3 and MAPbBr 3 crystals measured under one-and two-photon excitations P Ščajev, S Miasojedovas, S Juršėnas Journal of Materials Chemistry C 8 (30), 10290-10301, 2020 | 33 | 2020 |
| Optical gain in homoepitaxial GaN S Juršėnas, N Kurilčik, G Kurilčik, S Miasojedovas, A Žukauskas, T Suski, ... Applied physics letters 85 (6), 952-954, 2004 | 30 | 2004 |
| Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers E Gaubas, S Juršėnas, S Miasojedovas, J Vaitkus, A Žukauskas Journal of applied physics 96 (8), 4326-4333, 2004 | 25 | 2004 |
| Morphological and optical property study of Li doped ZnO produced by microwave-assisted solvothermal synthesis P Ščajev, R Durena, P Onufrijevs, S Miasojedovas, T Malinauskas, ... Materials Science in Semiconductor Processing 135, 106069, 2021 | 23 | 2021 |
| Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations S Juršėnas, S Miasojedovas, A Žukauskas, B Lucznik, I Grzegory, T Suski Applied physics letters 89 (17), 2006 | 21 | 2006 |
| Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth S Juršènas, E Kuokštis, S Miasojedovas, G Kurilčik, A Žukauskas, ... Applied physics letters 85 (5), 771-773, 2004 | 20 | 2004 |
| Polyurethane-gold and polyurethane-silver nanoparticles conjugates for efficient immobilization of maltogenase T Kochane, S Budriene, S Miasojedovas, N Ryskevic, A Straksys, ... Colloids and Surfaces A: Physicochemical and Engineering Aspects 532, 436-443, 2017 | 18 | 2017 |
| Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures K Jarašiūnas, R Aleksiejūnas, T Malinauskas, M Sūdžius, S Miasojedovas, ... physica status solidi (a) 202 (5), 820-823, 2005 | 18 | 2005 |
| Study of neutron irradiated structures of ammonothermal GaN E Gaubas, T Ceponis, L Deveikis, D Meskauskaite, S Miasojedovas, ... Journal of Physics D: Applied Physics 50 (13), 135102, 2017 | 15 | 2017 |
| Carrier dynamics in blue and green emitting InGaN MQWs R Aleksiejūnas, K Nomeika, S Miasojedovas, S Nargelas, T Malinauskas, ... physica status solidi (b) 252 (5), 977-982, 2015 | 15 | 2015 |
| Spectral distribution of excitation-dependent recombination rate in an In0. 13Ga0. 87N epilayer K Jarašiūnas, S Nargelas, R Aleksiejūnas, S Miasojedovas, M Vengris, ... Journal of Applied Physics 113 (10), 2013 | 15 | 2013 |
| Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques S Juršėnas, S Miasojedovas Journal of crystal growth 281 (1), 161-167, 2005 | 14 | 2005 |
| Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ... Gallium Nitride Materials and Devices Vii 8262, 269-276, 2012 | 12 | 2012 |
| Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates A Žukauskas, K Kazlauskas, G Tamulaitis, P Pobedinskas, S Juršėnas, ... physica status solidi (b) 243 (7), 1614-1618, 2006 | 12 | 2006 |
| Application of picosecond four‐wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN K Jarašiūnas, T Malinauskas, A Kadys, R Aleksiejūnas, M Sūdžius, ... physica status solidi (c) 2 (3), 1006-1009, 2005 | 11 | 2005 |
Saulius Jursenasprofesorius, Vilniaus universitetas在 ff.vu.lt 的电子邮件经过验证
