| Highly selective SiGe dry etch process for the enablement of stacked nanosheet gate-all-around transistors C Durfee, S Kal, S Pancharatnam, M Bhuiyan, I Otto IV, M Flaugh, J Smith, ... ECS Transactions 104 (4), 217, 2021 | 7 | 2021 |
| Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors C Durfee, I Otto IV, S Kal, S Pancharatnam, M Flaugh, T Kanaki, M Rednor, ... ECS Transactions 112 (1), 45, 2023 | 2 | 2023 |
| Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors C Durfee, I Otto, S Kal, S Pancharatnam, M Flaugh, T Kanaki, M Rednor, ... International Conference on Solid State Devices and Materials, 2023 | 1 | 2023 |
| Investigation into the effect of a PECVD-deposited SiOx chamber coating on the selective, radical-based NF3 etching of TaN with respect to BEOL low-k IV Otto, C Vallée, S Kal, P Biolsi Journal of Vacuum Science & Technology B 41 (3), 2023 | 1 | 2023 |
| Study of selective etching of TaN with respect to SiOCH dielectric using SiF4 plasma processes I Otto IV, C Vallée Japanese Journal of Applied Physics, 2024 | | 2024 |
| Selective gas phase etch of silicon germanium alloys T Kanaki, S Kal, A Mosden, M Matsumoto, S Irie US Patent App. 17/967,298, 2024 | | 2024 |
| Substrate processing with material modification and removal I Otto IV, S Kal US Patent App. 17/886,289, 2024 | | 2024 |
| Substrate processing with selective etching I Otto IV, S Kal US Patent App. 17/885,228, 2024 | | 2024 |
| Oxygen-free etching of non-volatile metals S Oyola-Reynoso, I Otto IV, Q Wang, A Mosden US Patent App. 17/826,236, 2023 | | 2023 |
Subhadeep KalTokyo Electron在 us.tel.com 的电子邮件经过验证
