| On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ... IEEE Transactions on Electron Devices 55 (2), 547-556, 2008 | 453 | 2008 |
| Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ... Journal of The Electrochemical Society 155 (7), H552, 2008 | 345 | 2008 |
| Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ... Applied physics letters 91 (8), 2007 | 345 | 2007 |
| Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ... Applied Physics Letters 103 (16), 2013 | 268 | 2013 |
| Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium A Satta, E Simoen, T Clarysse, T Janssens, A Benedetti, B De Jaeger, ... Applied Physics Letters 87 (17), 2005 | 181 | 2005 |
| The IMEC clean: A new concept for particle and metal removal on Si surfaces M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ... Solid State Technology 38 (7), 109-113, 1995 | 176 | 1995 |
| Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ... Journal of the Electrochemical Society 155 (2), G33, 2007 | 158 | 2007 |
| High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 150 | 2006 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 148 | 2008 |
| Ion-implantation issues in the formation of shallow junctions in germanium E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ... Materials science in semiconductor processing 9 (4-5), 634-639, 2006 | 148 | 2006 |
| P implantation doping of Ge: Diffusion, activation, and recrystallization A Satta, T Janssens, T Clarysse, E Simoen, M Meuris, A Benedetti, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 142 | 2006 |
| Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ... Applied Physics Letters 91 (13), 2007 | 140 | 2007 |
| Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates B De Jaeger, R Bonzom, F Leys, O Richard, J Van Steenbergen, ... Microelectronic engineering 80, 26-29, 2005 | 140 | 2005 |
| Deposition of HfO2 on germanium and the impact of surface pretreatments S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ... Applied physics letters 85 (17), 3824-3826, 2004 | 137 | 2004 |
| Method and apparatus for removing a liquid from a surface of a rotating substrate P Mertens, M Meuris, M Heyns US Patent 6,491,764, 2002 | 137 | 2002 |
| Capacitance-voltage characterization of GaAs–Al2O3 interfaces G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ... Applied Physics Letters 93 (18), 2008 | 136 | 2008 |
| Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns Microelectronic Engineering 86 (7-9), 1554-1557, 2009 | 135 | 2009 |
| Atomic layer deposition of hafnium oxide on germanium substrates A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ... Journal of applied physics 97 (6), 2005 | 133 | 2005 |
| Ge dangling bonds at the (100) Ge/GeO2 interface and the viscoelastic properties of GeO2 M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’Ev, ... Applied Physics Letters 93 (16), 2008 | 132 | 2008 |
| Diffusion, activation, and regrowth behavior of high dose P implants in Ge A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ... Applied Physics Letters 88 (16), 2006 | 130 | 2006 |
