| Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials<? format?> Using the Scanning Electron Microscope G Naresh-Kumar, B Hourahine, PR Edwards, AP Day, A Winkelmann, ... Physical review letters 108 (13), 135503, 2012 | 85 | 2012 |
| Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns S Vespucci, A Winkelmann, G Naresh-Kumar, KP Mingard, D Maneuski, ... Physical Review B 92 (20), 205301, 2015 | 59 | 2015 |
| Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN … A Vilalta-Clemente, G Naresh-Kumar, M Nouf-Allehiani, P Gamarra, ... Acta Materialia 125, 125-135, 2017 | 50 | 2017 |
| Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN G Naresh-Kumar, J Bruckbauer, PR Edwards, S Kraeusel, B Hourahine, ... Microscopy and Microanalysis 20 (1), 55-60, 2014 | 35 | 2014 |
| Origin of Red Emission in β‐Ga2O3 Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy G Naresh-Kumar, H MacIntyre, S Subashchandran, PR Edwards, ... physica status solidi (b) 258 (2), 2000465, 2021 | 33 | 2021 |
| Electron channelling contrast imaging for III-nitride thin film structures G Naresh-Kumar, D Thomson, M Nouf-Allehiani, J Bruckbauer, ... Materials Science in Semiconductor Processing 47, 44-50, 2016 | 29 | 2016 |
| Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction G Naresh-Kumar, A Vilalta-Clemente, H Jussila, A Winkelmann, G Nolze, ... Scientific Reports 7 (1), 10916, 2017 | 27 | 2017 |
| Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0. 82Ga0. 18N G Kusch, M Nouf-Allehiani, F Mehnke, C Kuhn, PR Edwards, T Wernicke, ... Applied Physics Letters 107 (7), 2015 | 27 | 2015 |
| Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope G Naresh-Kumar, C Mauder, KR Wang, S Kraeusel, J Bruckbauer, ... Applied Physics Letters 102 (14), 2013 | 26 | 2013 |
| Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope G Naresh‐Kumar, B Hourahine, A Vilalta‐Clemente, P Ruterana, ... physica status solidi (a) 209 (3), 424-426, 2012 | 24 | 2012 |
| Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope G Naresh-Kumar, J Bruckbauer, A Winkelmann, X Yu, B Hourahine, ... Nano letters 19 (6), 3863-3870, 2019 | 21 | 2019 |
| AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ... Journal of Crystal Growth 531, 125343, 2020 | 20 | 2020 |
| Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors MHCTC G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H ... United Kingdom Nitrides Consortium (UKNC - 2015), England, 2015 | 19* | 2015 |
| Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications A Winkelmann, G Nolze, S Vespucci, G Naresh‐Kumar, C Trager‐Cowan, ... Journal of Microscopy 267 (3), 330-346, 2017 | 17 | 2017 |
| Dislocation contrast in electron channelling contrast images as projections of strain-like components E Pascal, B Hourahine, G Naresh-Kumar, K Mingard, C Trager-Cowan Materials Today: Proceedings 5 (6), 14652-14661, 2018 | 16 | 2018 |
| Subgrain structure and dislocations in WC-Co hard metals revealed by electron channelling contrast imaging BM Jablon, K Mingard, A Winkelmann, G Naresh-Kumar, B Hourahine, ... International Journal of Refractory Metals and Hard Materials 87, 105159, 2020 | 15 | 2020 |
| Stress distribution of GaN layer grown on micro-pillar patterned GaN templates S Nagarajan, O Svensk, M Ali, G Naresh-Kumar, C Trager-Cowan, ... Applied Physics Letters 103 (1), 2013 | 15 | 2013 |
| Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, PR Edwards, ... Semiconductor Science and Technology 35 (5), 054001, 2020 | 13 | 2020 |
| Spatially-resolved optical and structural properties of semi-polar AlxGa1−xN with x up to 0.56 J Bruckbauer, Z Li, G Naresh-Kumar, M Warzecha, PR Edwards, L Jiu, ... Scientific Reports 7 (1), 10804, 2017 | 12 | 2017 |
| Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes ED Le Boulbar, J Priesol, M Nouf-Allehiani, G Naresh-Kumar, S Fox, ... Journal of Crystal Growth 466, 30-38, 2017 | 12 | 2017 |
Carol Trager-CowanDepartment of Physics, University of Strathclyde在 strath.ac.uk 的电子邮件经过验证
