| Isolated electron spins in silicon carbide with millisecond coherence times DJ Christle, AL Falk, P Andrich, PV Klimov, JU Hassan, NT Son, E Janzén, ... Nature materials 14 (2), 160-163, 2015 | 522 | 2015 |
| Divacancy in 4h-sic NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ... Physical review letters 96 (5), 055501, 2006 | 264 | 2006 |
| Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ... Physical Review X 7 (2), 021046, 2017 | 244 | 2017 |
| High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ... Nature communications 10 (1), 1-8, 2019 | 238 | 2019 |
| Electrical and optical control of single spins integrated in scalable semiconductor devices CP Anderson, A Bourassa, KC Miao, G Wolfowicz, PJ Mintun, AL Crook, ... Science 366 (6470), 1225-1230, 2019 | 235 | 2019 |
| Entanglement and control of single nuclear spins in isotopically engineered silicon carbide A Bourassa, CP Anderson, KC Miao, M Onizhuk, H Ma, AL Crook, H Abe, ... Nature Materials 19 (12), 1319-1325, 2020 | 153 | 2020 |
| Developing silicon carbide for quantum spintronics NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ... Applied Physics Letters 116 (19), 2020 | 152 | 2020 |
| Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence C Babin, R Stöhr, N Morioka, T Linkewitz, T Steidl, R Wörnle, D Liu, ... Nature materials 21 (1), 67-73, 2022 | 123 | 2022 |
| Five-second coherence of a single spin with single-shot readout in silicon carbide CP Anderson, EO Glen, C Zeledon, A Bourassa, Y Jin, Y Zhu, C Vorwerk, ... Science advances 8 (5), eabm5912, 2022 | 95 | 2022 |
| Thick silicon carbide homoepitaxial layers grown by CVD techniques A Henry, J ul Hassan, JP Bergman, C Hallin, E Janzen Chemical Vapor Deposition 12 (8‐9), 475-482, 2006 | 91 | 2006 |
| Defects and carrier compensation in semi-insulating substrates NT Son, P Carlsson, J Ul Hassan, B Magnusson, E Janzén Physical Review B—Condensed Matter and Materials Physics 75 (15), 155204, 2007 | 86 | 2007 |
| Effective mass of electron in monolayer graphene: Electron-phonon interaction E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ... Journal of Applied Physics 113 (4), 2013 | 82 | 2013 |
| On-axis homoepitaxial growth on Si-face 4H–SiC substrates J Hassan, JP Bergman, A Henry, E Janzén Journal of Crystal Growth 310 (20), 4424-4429, 2008 | 81 | 2008 |
| Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ... Nature communications 11 (1), 2516, 2020 | 80 | 2020 |
| Stark tuning and electrical charge state control of single divacancies in silicon carbide CF de las Casas, DJ Christle, J Ul Hassan, T Ohshima, NT Son, ... Applied Physics Letters 111 (26), 2017 | 80 | 2017 |
| Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device M Widmann, M Niethammer, DY Fedyanin, IA Khramtsov, T Rendler, ... Nano letters 19 (10), 7173-7180, 2019 | 78 | 2019 |
| Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology L Spindlberger, A Csóré, G Thiering, S Putz, R Karhu, JU Hassan, NT Son, ... Physical Review Applied 12 (1), 014015, 2019 | 71 | 2019 |
| Layer-number determination in graphene on SiC by reflectance mapping IG Ivanov, JU Hassan, T Iakimov, AA Zakharov, R Yakimova, E Janzén Carbon 77, 492-500, 2014 | 67 | 2014 |
| Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in - P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ... Physical Review Applied 13 (5), 054017, 2020 | 66 | 2020 |
| Characterization of the carrot defect in 4H-SiC epitaxial layers J Hassan, A Henry, PJ McNally, JP Bergman Journal of crystal growth 312 (11), 1828-1837, 2010 | 61 | 2010 |
