受强制性开放获取政策约束的文章 - Anil G. Khairnar了解详情
无法在其他位置公开访问的文章：5 篇
High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
AM Mahajan, AG Khairnar, BJ Thibeault
Silicon 8 (3), 345-350, 2016
强制性开放获取政策： US National Science Foundation, Council of Scientific and Industrial …
HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment
KS Agrawal, VS Patil, AG Khairnar, AM Mahajan
Applied Surface Science 364, 747-751, 2016
强制性开放获取政策： Department of Science & Technology, India
Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD
VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan
Materials Science in Semiconductor Processing 56, 277-281, 2016
强制性开放获取政策： US National Science Foundation, Department of Science & Technology, India
Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate
AG Khairnar, KS Agrawal, VS Patil, AM Mahajan
Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014
强制性开放获取政策： Council of Scientific and Industrial Research, India
Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium
AG Khairnar, VS Patil, AM Mahajan
Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
可在其他位置公开访问的文章：7 篇
Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
AM Mahajan, AG Khairnar, BJ Thibeault
Semiconductors Физика и техника полупроводников 48 (4), 2014
强制性开放获取政策： Council of Scientific and Industrial Research, India
Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors
KS Agrawal, VS Patil, AG Khairnar, AM Mahajan
Journal of Materials Science: Materials in Electronics 28, 12503-12508, 2017
强制性开放获取政策： Department of Science & Technology, India
Electrical properties of HfO2 high-k thin-film MOS capacitors for advanced CMOS technology
AG Khairnar, LS Patil, RS Salunke, AM Mahajan
Indian Journal of Physics 89 (11), 1177-1181, 2015
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Synthesis of cerium dioxide high-k thin films as a gate dielectric in MOS capacitor
AG Khairnar, YS Mhaisagar, AM Mahajan
Сумський державний університет, 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
Enhancement in mechanical properties of silica low-k thin films using wet chemical technique
YS Mhaisagar, AS Gaikad, AG Khairnar, AM Mahajan
Indian Journal of Pure & Applied Physics (IJPAP) 54 (7), 439-442, 2016
强制性开放获取政策： Department of Science & Technology, India
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
AG Khairnar, VS Patil, KS Agrawal, RS Salunke, AM Mahajan
Semiconductors 51, 131-133, 2017
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure
AG Khairnar, YS Mhaisagar, AM Mahajan
J. Nano- Electron. Phys. 5 (2), 02009-1-02009-3, 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
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