| Ultra-high-responsivity broadband detection of Si metal–semiconductor–metal schottky photodetectors improved by ZnO nanorod arrays DS Tsai, CA Lin, WC Lien, HC Chang, YL Wang, JH He ACS nano 5 (10), 7748-7753, 2011 | 160 | 2011 |
| Solar-blind photodetectors for harsh electronics DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ... Scientific reports 3 (1), 2628, 2013 | 140 | 2013 |
| AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano Applied Physics Letters 97 (14), 2010 | 94 | 2010 |
| 4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano IEEE Electron Device Letters 33 (11), 1586-1588, 2012 | 88 | 2012 |
| Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ... Journal of Micromechanics and Microengineering 23 (2), 025019, 2013 | 83 | 2013 |
| Growth of epitaxial 3C-SiC films on Si (100) via low temperature SiC buffer layer WC Lien, N Ferralis, C Carraro, R Maboudian Crystal growth & design 10 (1), 36-39, 2010 | 46 | 2010 |
| 4H-SiC N-channel JFET for operation in high-temperature environments WC Lien, N Damrongplasit, JH Paredes, DG Senesky, TJK Liu, AP Pisano IEEE Journal of the Electron Devices Society 2 (6), 164-167, 2014 | 42 | 2014 |
| Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection WC Lien, DS Tsai, SH Chiu, DG Senesky, R Maboudian, AP Pisano, ... IEEE Electron Device Letters 32 (11), 1564-1566, 2011 | 41 | 2011 |
| Er-doped ZnO nanorod arrays with enhanced 1540 nm emission by employing Ag island films and high-temperature annealing JW Lo, WC Lien, CA Lin, JH He ACS Applied Materials & Interfaces 3 (4), 1009-1014, 2011 | 38 | 2011 |
| An efficient broadband and omnidirectional light-harvesting scheme employing a hierarchical structure based on a ZnO nanorod/Si 3 N 4-coated Si microgroove on 5-inch single … CA Lin, KY Lai, WC Lien, JH He Nanoscale 4 (20), 6520-6526, 2012 | 37 | 2012 |
| Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment S Shao, WC Lien, A Maralani, AP Pisano 2014 44th European Solid State Device Research Conference (ESSDERC), 138-141, 2014 | 11 | 2014 |
| Growth of 3C-SiC thin film on AlN/Si (100) with atomically abrupt interface via tailored precursor feeding procedure WC Lien, KB Cheng, DG Senesky, C Carraro, AP Pisano, R Maboudian Electrochemical and Solid-State Letters 13 (7), D53, 2010 | 9 | 2010 |
| Multilayer zinc oxide varistor WC Lien, CT Kuo, JN Lin, JA Zhu, LY Zhang US Patent 7,541,910, 2009 | 9 | 2009 |
| Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same CH Lien, CT Kuo, JN Lin, JA Zhu, LY Zhang, XG Huang, WC Lien US Patent 7,724,124, 2010 | 8 | 2010 |
| GROWTH OF HIGHLY C-AXIS ORIENTED ALN FILMS ON 3C-SIC/SI SUBSTRATE CM Lin, WC Lien, TT Yen, VV Felmetsger, DG Senesky, MA Hopcroft, ... | 8 | 2010 |
| 4H-silicon carbide pn diode for high temperature (600° C) environment applications SQ Shao, WC Lien, A Maralani, JC Cheng, KL Dorsey, AP Pisano Materials Science Forum 821, 636-639, 2015 | 7 | 2015 |
| Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications WC Lien, DS Tsai, SH Chiu, DG Senesky, R Maboudian, AP Pisano, ... 2011 16th International Solid-State Sensors, Actuators and Microsystems …, 2011 | 7 | 2011 |
| Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure CM Lin, YY Chen, VV Felmetsger, TT Yen, WC Lien, DG Senesky, ... 2010 IEEE International Ultrasonics Symposium, 1696-1699, 2010 | 7 | 2010 |
| Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition WC Lien, N Ferralis, AP Pisano, C Carraro, R Maboudian Applied Physics Letters 95 (10), 2009 | 7 | 2009 |
| Silicon carbide transistors for IC design applications up to 600 C A Maralani, WC Lien, N Zhang, AP Pisano Materials Science Forum 778, 1126-1129, 2014 | 6 | 2014 |
