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Cong Su
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引用次数
引用次数
年份
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593, 211-217, 2021
7662021
Liquid cell transmission electron microscopy observation of lithium metal growth and dissolution: Root growth, dead lithium and lithium flotsams
A Kushima, KP So, C Su, P Bai, N Kuriyama, T Maebashi, Y Fujiwara, ...
Nano Energy 32, 271-279, 2017
4372017
Two-dimensional halide perovskite lateral epitaxial heterostructures
E Shi, B Yuan, SB Shiring, Y Gao, Akriti, Y Guo, C Su, M Lai, P Yang, ...
Nature 580 (7805), 614-620, 2020
3812020
Gradient Li-rich oxide cathode particles immunized against oxygen release by a molten salt treatment
Z Zhu, D Yu, Y Yang, C Su, Y Huang, Y Dong, I Waluyo, B Wang, A Hunt, ...
Nature Energy 4 (12), 1049-1058, 2019
2802019
Colloidal synthesis of 1T'phase dominated WS2 towards endurable electrocatalysis
Z Liu, N Li, C Su, H Zhao, L Xu, Z Yin, J Li, Y Du
Nano Energy 50, 176-181, 2018
1472018
Chemiresistive graphene sensors for ammonia detection
C Mackin, V Schroeder, A Zurutuza, C Su, J Kong, TM Swager, T Palacios
ACS applied materials & interfaces 10 (18), 16169-16176, 2018
1282018
Two-dimensional carbon allotrope with strong electronic anisotropy
C Su, H Jiang, J Feng
Physical Review B—Condensed Matter and Materials Physics 87 (7), 075453, 2013
1272013
Enhancement of van der Waals interlayer coupling through polar Janus MoSSe
K Zhang, Y Guo, Q Ji, AY Lu, C Su, H Wang, AA Puretzky, DB Geohegan, ...
Journal of the American Chemical Society 142 (41), 17499-17507, 2020
962020
Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
WS Leong, Q Ji, N Mao, Y Han, H Wang, A Goodman, A Vignon, C Su, ...
Journal of the American Chemical Society 140 (39), 12354, 2018
962018
Engineering single-atom dynamics with electron irradiation
C Su, M Tripathi, QB Yan, Z Wang, Z Zhang, C Hofer, H Wang, L Basile, ...
Science Advances 5, 2019
852019
Tailoring Exciton Dynamics by Elastic Strain‐Gradient in Semiconductors
X Fu, C Su, Q Fu, X Zhu, R Zhu, C Liu, Z Liao, J Xu, W Guo, J Feng, J Li, ...
Advanced Materials 26 (16), 2572-2579, 2014
852014
Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition
PC Shen, Y Lin, C Su, C McGahan, AY Lu, X Ji, X Wang, H Wang, N Mao, ...
Nature Electronics 5 (1), 28-36, 2022
622022
Additive manufacturing of patterned 2D semiconductor through recyclable masked growth
Y Guo, PC Shen, C Su, AY Lu, M Hempel, Y Han, Q Ji, Y Lin, E Shi, ...
Proceedings of the National Academy of Sciences 116 (9), 3437-3442, 2019
562019
Low-temperature copper bonding strategy with graphene interlayer
H Wang, WS Leong, F Hu, L Ju, C Su, Y Guo, J Li, M Li, A Hu, J Kong
ACS nano 12 (3), 2395-2402, 2018
552018
Tuning colour centres at a twisted hexagonal boron nitride interface
C Su, F Zhang, S Kahn, B Shevitski, J Jiang, C Dai, A Ungar, JH Park, ...
Nature materials 21 (8), 896-902, 2022
53*2022
Designing artificial two-dimensional landscapes via atomic-layer substitution
Y Guo, Y Lin, K Xie, B Yuan, J Zhu, PC Shen, AY Lu, C Su, E Shi, K Zhang, ...
Proceedings of the National Academy of Sciences 118 (32), e2106124118, 2021
522021
Hard, transparent, sp3-containing 2D phase formed from few-layer graphene under compression
LGP Martins, DL Silva, JS Smith, AY Lu, C Su, M Hempel, C Occhialini, ...
Carbon 173, 744-757, 2021
44*2021
Waterproof molecular monolayers stabilize 2D materials
C Su, Z Yin, QB Yan, Z Wang, H Lin, L Sun, W Xu, T Yamada, X Ji, ...
Proceedings of the National Academy of Sciences 116 (42), 2019
372019
Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals
Q Ji, C Su, N Mao, X Tian, JC Idrobo, J Miao, WA Tisdale, A Zettl, J Li, ...
Science Advances 7 (44), 2021
332021
In situ-generated volatile precursor for CVD growth of a semimetallic 2D dichalcogenide
Z Gao, Q Ji, PC Shen, Y Han, WS Leong, N Mao, L Zhou, C Su, J Niu, X Ji, ...
ACS applied materials & interfaces 10 (40), 34401-34408, 2018
302018
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