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Kirils Surovovs
Kirils Surovovs
Researcher, Institute of Numerical Modelling
在 lu.lv 的电子邮件经过验证
标题
引用次数
引用次数
年份
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
A Sabanskis, K Surovovs, J Virbulis
Journal of Crystal Growth 457, 65-71, 2017
202017
Hydrodynamical aspects of the floating zone silicon crystal growth process
K Surovovs, A Muiznieks, A Sabanskis, J Virbulis
Journal of crystal growth 401, 120-123, 2014
182014
MODELLING OF PHASE BOUNDARIES AND MELT FLOW IN CRUCIBLE-FREE SILICON CRYSTAL GROWTH USING HIGH-FREQUENCY HEATING.
K Surovovs, M Plāte, J Virbulis
Magnetohydrodynamics (0024-998X) 53 (4), 2017
42017
OPTIMIZATION OF THE SHAPE OF HIGH-FREQUENCY INDUCTOR FOR THE PEDESTAL GROWTH OF SILICON CRYSTALS.
K Surovovs, A Kravtsov, J Virbulis
Magnetohydrodynamics (0024-998X) 55 (3), 2019
32019
Float zone single crystals for testing rods, pulled under electron beam heating
A Kravtsov, K Surovovs, J Virbulis
IOP Conference Series: Materials Science and Engineering 503 (1), 012022, 2019
32019
Modelling of the influence of electromagnetic force on melt convection and dopant distribution at floating zone growth of silicon
A Sabanskis, K Surovovs, A Krauze, M Plāte, J Virbulis
Magnetohydrodynamics 51, 375-384, 2015
32015
Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth
A Sabanskis, K Surovovs, J Virbulis
Magnetohydrodynamics 51 (1), 157-170, 2015
32015
Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals
K Surovovs, M Surovovs, A Sabanskis, J Virbulis, K Dadzis, R Menzel, ...
Crystals 12 (12), 1718, 2022
22022
Numerical modelling for the diameter increase of silicon crystals grown with the pedestal method
K Surovovs, A Kravtsov, J Virbulis
Journal of Crystal Growth, 126095, 2021
22021
The Modelling of Phase Boundaries and Melt Flow in the Crucible-free Silicon Crystal Growth Using High-frequency Induction Heating
K Surovovs, M Plāte, J Virbulis
Proceedings of the VIII International Scientific Colloquium" Modelling for …, 2017
12017
Gāzes plūsmas ietekmes uz zonas formu un piemaisījumu pārnesi modelēšana peldošās zonas procesā
A Sabanskis
Latvijas Universitāte, 2015
12015
LIELA DIAMETRA SILĪCIJA KRISTĀLU AUDZĒŠANAS AR PJEDESTĀLA PROCESU SKAITLISKĀ MODELĒŠANA
K Surovovs
Latvijas Universitāte, 2023
2023
Mathematical Methods for Research Excellence: Book of Abstracts
D Cepīte-Frišfelde
University of Latvia, 2022
2022
Modelling of the pedestal growth of silicon crystals
K Surovovs, A Kravtsov, J Virbulis
Lithuanian Journal of Physics 61 (3), 2021
2021
Zvaigžņotā Debess: 2017/18, Ziema (238)
V Beldavs, D Bočarovs, A Cēbers, I Daube, D Docenko, I Eglītis, M Gills, ...
Apgāds “Mācību grāmata”, 2017
2017
Numerical modelling of Inductor Optimization for Silicon Crystal Growth with Pedestal Method
K Surovovs, A Kravtsov, J Virbulis
MODELLING OF CRUST THICKNESS FOR SILICON PURIFYING PROCESS WITH ELECTRON BEAM
K Surovovs, K Bergfelds, A Muiznieks, A Krauze, M Plate, G Chikvaidze
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