受强制性开放获取政策约束的文章 - Amit Kumar Singh了解详情
无法在其他位置公开访问的文章：4 篇
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Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain
AK Singh, M Riyaj, SG Anjum, N Yadav, A Rathi, MJ Siddiqui, PA Alvi
Superlattices and Microstructures 98, 406-415, 2016
强制性开放获取政策： Department of Science & Technology, India
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Optimization of Type-II ‘W’ shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature
R Dolia, G Bhardwaj, AK Singh, S Kumar, PA Alvi
Superlattices and Microstructures, 2017
强制性开放获取政策： Department of Science & Technology, India
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First-Principles Investigation of Electronic Properties of GaAsxSb1–x Ternary Alloys
AK Singh, D Chandra, S Kattayat, S Kumar, PA Alvi, A Rathi
Semiconductors 53 (13), 1731-1739, 2019
强制性开放获取政策： Department of Science & Technology, India
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Crystallographic parameters and ordering in MgZnO alloys: An ab-initio study
G Kiran, AK Singh, R Singh
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2020
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：7 篇
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Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain
AK Singh, A Rathi, M Riyaj, G Bhardwaj, PA Alvi
Superlattices and Microstructures, 2017
强制性开放获取政策： Department of Science & Technology, India
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Theoretical investigation of electronic and optical properties of doped and defective MoSe2 monolayers
VP Vinturaj, AK Yadav, TK Jasil, G Kiran, R Singh, AK Singh, V Garg, ...
Bulletin of Materials Science 46 (3), 121, 2023
强制性开放获取政策： Department of Science & Technology, India
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Wavefunctions and optical gain in Al0.8Ga0.2As/GaAs0.8P0.2 type-I QW-heterostructure under external electric field
AK Singh, A Rathi, M Riyaj, K Sandhya, G Bhardwaj, PA Alvi
Computer, Communications and Electronics (Comptelix), 2017 International …, 2017
强制性开放获取政策： Department of Science & Technology, India
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Growth optimization and DFT investigation of doping effect on properties of VS2 monolayer crystals
AK Yadav, C Patel, G Kiran, R Singh, AK Singh, V Garg, S Mukherjee, ...
The European Physical Journal B 96 (4), 49, 2023
强制性开放获取政策： Department of Science & Technology, India
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Wavefunctions and Optical Gain in Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain
AK Singh, A Rathi, M Riyaj, PA Alvi
Engineering Vibration, Communication and Information Processing: ICoEVCI …, 2019
强制性开放获取政策： Department of Science & Technology, India
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DFT study about the effect of doping on the properties of GaSb material and designing of high‐efficiency infrared photodetector
B Bhandari, AK Yadav, R Singh, G Kiran, AK Singh, V Garg, SK Pandey
physica status solidi (b), 2023
强制性开放获取政策： Department of Science & Technology, India
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Establishing composition dependent k· p parameters for (Al, Ga) N alloys
AK Singh, A Gomez-Iglesias, S Schulz
2024 International Conference on Numerical Simulation of Optoelectronic …, 2024
强制性开放获取政策： Science Foundation Ireland, European Commission
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