| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 395 | 2020 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 212 | 2018 |
| Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ... Applied Physics Letters 105 (5), 2014 | 134 | 2014 |
| Highly conductive n-AlxGa1− xN layers with aluminum mole fractions above 80% F Mehnke, T Wernicke, H Pingel, C Kuhn, C Reich, V Kueller, A Knauer, ... Applied Physics Letters 103 (21), 2013 | 128 | 2013 |
| Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ... IEEE Photonics Technology Letters 26 (4), 342-345, 2013 | 118 | 2013 |
| Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ... Applied Physics Letters 107 (14), 2015 | 105 | 2015 |
| Effective thermal management in ultraviolet light-emitting diodes with micro-LED arrays NL Ploch, H Rodriguez, C Stolmacker, M Hoppe, M Lapeyrade, ... IEEE transactions on electron devices 60 (2), 782-786, 2013 | 85 | 2013 |
| Defect-related degradation of AlGaN-based UV-B LEDs D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, J Glaab, ... IEEE Transactions on Electron Devices 64 (1), 200-205, 2016 | 76 | 2016 |
| Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80% F Mehnke, XT Trinh, H Pingel, T Wernicke, E Janzén, NT Son, M Kneissl Journal of Applied Physics 120 (14), 2016 | 70 | 2016 |
| High-power UV-B LEDs with long lifetime J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ... Gallium Nitride Materials and Devices X 9363, 182-194, 2015 | 64 | 2015 |
| Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ... Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019 | 63 | 2019 |
| Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates N Lobo-Ploch, F Mehnke, L Sulmoni, HK Cho, M Guttmann, J Glaab, ... Applied Physics Letters 117 (11), 2020 | 61 | 2020 |
| Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016 | 57 | 2016 |
| Improved injection efficiency in 290 nm light emitting diodes with Al (Ga) N electron blocking heterostructure T Kolbe, F Mehnke, M Guttmann, C Kuhn, J Rass, T Wernicke, M Kneissl Applied Physics Letters 103 (3), 2013 | 56 | 2013 |
| Degradation of (InAlGa) N-based UV-B light emitting diodes stressed by current and temperature J Glaab, C Ploch, R Kelz, C Stölmacker, M Lapeyrade, NL Ploch, J Rass, ... Journal of Applied Physics 118 (9), 2015 | 53 | 2015 |
| MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl Journal of crystal growth 355 (1), 59-62, 2012 | 52 | 2012 |
| Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ... Journal of Crystal Growth 464, 185-189, 2017 | 49 | 2017 |
| Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ... Photonics Research 5 (2), A44-A51, 2017 | 47 | 2017 |
| Structural and optical properties of semipolar (112¯ 2) AlGaN grown on (101¯ 0) sapphire by metal–organic vapor phase epitaxy J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ... Journal of crystal growth 367, 42-47, 2013 | 47 | 2013 |
| Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ... Scientific reports 11 (1), 14647, 2021 | 46 | 2021 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, Germany在 physik.tu-berlin.de 的电子邮件经过验证
