受强制性开放获取政策约束的文章 - Tzu-Ming Lu了解详情
无法在其他位置公开访问的文章：7 篇
In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ...
Physical Review B—Condensed Matter and Materials Physics 78 (23), 233309, 2008
强制性开放获取政策： Austrian Science Fund
A PtNiGe resistance thermometer for cryogenic applications
CT Harris, TM Lu
Review of Scientific Instruments 92 (5), 2021
强制性开放获取政策： US Department of Energy
Native Oxide Formation in NbTiN Thin Films for Traveling-Wave Superconducting Nanostripe Single-Photon Detectors
SA Nazib, TA Hutchins-Delgado, MV Reymatias, H Lee, E Jamil, ...
Quantum 2.0, QW2A. 34, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
CMOS Compatible Atomic-Precision Donor Devices
DR Ward, DAM Campbell, T England, J Mincy, S Carr, EM Anderson, ...
Electrochemical Society Meeting Abstracts 237, 1384-1384, 2020
强制性开放获取政策： US Department of Energy
Analysis Native Oxide Formation Kinetics in Nanometer-Scale NbTiN Thin Films
SA Nazib, MV Reymatias, TA Hutchins-Delgado, SI Gharde, EM Sommer, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 366-367, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric
EM Anderson, L Maurer, L Tracy, SW Smith, P Lu, AM Katzenmeyer, ...
2019 Device Research Conference (DRC), 205-206, 2019
强制性开放获取政策： US Department of Energy
Heteroepitaxy of Ge on Cube-Textured Ni (001) Foils Through CaF2 Buffer Layer
L Chen, ZH Lu, TM Lu, I Bhat, SB Zhang, A Goyal, LH Zhang, K Kisslinger, ...
MRS Advances 1 (43), 2947-2952, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
可在其他位置公开访问的文章：124 篇
Induced superconducting pairing in integer quantum Hall edge states
M Hatefipour, JJ Cuozzo, J Kanter, WM Strickland, CR Allemang, TM Lu, ...
Nano Letters 22 (15), 6173-6178, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Atomic precision advanced manufacturing for digital electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
EDFA Technical Articles 22 (1), 4-10, 2020
强制性开放获取政策： US Department of Energy
Single and double hole quantum dots in strained Ge/SiGe quantum wells
WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ...
Nanotechnology 30 (21), 215202, 2019
强制性开放获取政策： US Department of Energy
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu
AIP Advances 5 (10), 2015
强制性开放获取政策： US Department of Energy
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
YH Su, Y Chuang, CY Liu, JY Li, TM Lu
Physical Review Materials 1 (4), 044601, 2017
强制性开放获取政策： US Department of Energy
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu
Applied Physics Letters 108 (23), 2016
强制性开放获取政策： US Department of Energy
All-optical lithography process for contacting nanometer precision donor devices
DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 2017
强制性开放获取政策： US Department of Energy
Effective g factor of low-density two-dimensional holes in a Ge quantum well
TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu
Applied Physics Letters 111 (10), 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy
Strain effects on rashba spin‐orbit coupling of 2D hole gases in GeSn/Ge heterostructures
CT Tai, PY Chiu, CY Liu, HS Kao, CT Harris, TM Lu, CT Hsieh, SW Chang, ...
Advanced Materials 33 (26), 2007862, 2021
强制性开放获取政策： US Department of Energy
Designing nanomagnet arrays for topological nanowires in silicon
LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu
Physical Review Applied 10 (5), 054071, 2018
强制性开放获取政策： US Department of Energy
Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
YH Su, KY Chou, Y Chuang, TM Lu, JY Li
Journal of Applied Physics 125 (23), 2019
强制性开放获取政策： US Department of Energy
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
CT Chou, NT Jacobson, JE Moussa, AD Baczewski, Y Chuang, CY Liu, ...
Nanoscale 10 (44), 20559-20564, 2018
强制性开放获取政策： US Department of Energy
High kinetic inductance NbTiN superconducting transmission line resonators in the very thin film limit
TM Bretz-Sullivan, RM Lewis, AL Lima-Sharma, D Lidsky, CM Smyth, ...
Applied Physics Letters 121 (5), 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy
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