| Intel 22nm low-power FinFET (22FFL) process technology for 5G and beyond HJ Lee, S Callender, S Rami, W Shin, Q Yu, JM Marulanda 2020 IEEE Custom Integrated Circuits Conference (CICC), 1-7, 2020 | 31 | 2020 |
| Improved micromachined terahertz on-wafer probe using integrated strain sensor Q Yu, MF Bauwens, C Zhang, AW Lichtenberger, RM Weikle, NS Barker IEEE transactions on microwave theory and techniques 61 (12), 4613-4620, 2013 | 31 | 2013 |
| Enabling hybrid bonding on Intel process A Elsherbini, K Jun, R Vreeland, W Brezinski, HK Niazi, Y Shi, Q Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2021 | 26 | 2021 |
| Implementation of high power RF devices with hybrid workfunction and OxideThickness in 22nm low-power FinFET technology HJ Lee, S Morarka, S Rami, Q Yu, M Weiss, G Liu, M Armstrong, CY Su, ... 2019 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2019 | 22 | 2019 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 15 | 2022 |
| A 50-Gb/s 134-GHz 16-QAM 3-m dielectric waveguide transceiver system implemented in 22-nm FinFET CMOS TW Brown, GC Dogiamis, YS Yeh, D Correas-Serrano, TS Rane, ... IEEE Solid-State Circuits Letters 4, 206-209, 2021 | 13 | 2021 |
| Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications HW Then, M Radosavljevic, Q Yu, A Latorre-Rey, H Vora, S Bader, ... IEEE Microwave and Wireless Technology Letters 33 (6), 835-838, 2023 | 10 | 2023 |
| mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process Q Yu, S Rami, J Waldemer, Y Ma, V Neeli, J Garrett, G Liu, J Koo, ... 2020 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2020 | 10 | 2020 |
| An improved ring-centered waveguide flange for millimeter-and submillimeter-wave applications H Li, AR Kerr, JL Hesler, G Wu, Q Yu, NS Barker, RM Weikle 2010 76th ARFTG Microwave Measurement Conference, 1-4, 2010 | 10 | 2010 |
| 5G mmWave power amplifier and low-noise amplifier in 300mm GaN-on-Si technology Q Yu, HW Then, D Thomson, J Chou, J Garrett, I Huang, I Momson, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 9 | 2022 |
| Modeling and characterization of through-silicon-vias (TSVs) in radio frequency regime in an active interposer technology A Rahimi, P Somarajan, Q Yu 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 1383-1389, 2020 | 8 | 2020 |
| Integrated strain sensor for micromachined terahertz on-wafer probe Q Yu, M Bauwens, C Zhang, AW Lichtenberger, RM Weikle, NS Barker 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 8 | 2013 |
| A 50 Gbps 134 GHz 16 QAM 3 m dielectric waveguide transceiver system implemented in 22nm CMOS TW Brown, GC Dogiamis, YS Yeh, D Correas-Serrano, TS Rane, ... 2021 Symposium on VLSI Circuits, 1-2, 2021 | 7 | 2021 |
| A 330–500GHz micro-machined directional coupler JT Do, Q Yu, JL Hesler, NS Barker 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013 | 7 | 2013 |
| Fabrication of calibration standards for the millimeter-and sub-millimeter wavelength ring-centered waveguide flange Q Yu, JL Hesler, AR Kerr, H Li, RM Weikle, NS Barker 77th ARFTG Microwave Measurement Conference, 1-4, 2011 | 7 | 2011 |
| An F-band power amplifier with skip-layer via achieving 23.8% PAE in FinFET technology Q Yu, J Garrett, S Hwangbo, G Dogiamis, S Rami 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 179-182, 2022 | 6 | 2022 |
| An E-band power amplifier using high power RF device with hybrid work function and oxide thickness in 22nm low-power FinFET Q Yu, YS Yeh, J Garret, J Koo, S Morarka, S Rami, G Liu, HJ Lee 2020 IEEE/MTT-S International Microwave Symposium (IMS), 999-1002, 2020 | 6 | 2020 |
| A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology Q Yu, HW Then, I Momson, D Thomson, J Garrett, S Rami 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 931-934, 2023 | 4 | 2023 |
| Microelectronic assemblies having a hybrid bonded interposer for die-to-die fan-out scaling G Dogiamis, Q Yu, AA Elsherbini, SM Liff US Patent App. 17/347,394, 2022 | 4 | 2022 |
| Field-effect transistors with asymmetric gate stacks S Rami, HJ Lee, S Morarka, G Liu, Q Yu, B Sell, M Armstrong US Patent 11,515,424, 2022 | 4 | 2022 |
N. Scott BarkerProfessor of Electrical and Computer Engineering, University of Virginia在 virginia.edu 的电子邮件经过验证
