| High-strength glass-ceramic materials synthesized in a large solar furnace IG Atabaev, SA Faiziev, M Paizullakhanov, ZZ Shermatov, O Razhamatov Applied Solar Energy 51, 202-205, 2015 | 19 | 2015 |
| Oxide film assisted dopant diffusion in silicon carbide CC Tin, S Mendis, K Chew, I Atabaev, T Saliev, E Bakhranov, B Atabaev, ... Thin Solid Films 518 (24), e118-e120, 2010 | 15 | 2010 |
| The effects of the solar radiant flux density on the properties of pyroceramic materials TT Riskiev, MS Paizullakhanov, IG Atabaev, SA Faiziev, ZZ Shermatov Applied Solar Energy 50, 260-264, 2014 | 14 | 2014 |
| Growth of ITO Films by Modified Chemical Vapor Deposition Method MUHVAP I. G. Atabaev* International Journal of Thin Films Science and Technology 5 (1), 13-16, 2016 | 11 | 2016 |
| Nonequilibrium diffusion of boron in SiC at low temperatures IG Atabaev, TM Saliev, EN Bakhranov, D Saidov, K Juraev, CC Tin, ... Materials Sciences and Applications 1 (02), 53, 2010 | 10 | 2010 |
| Diffusion and electroluminescence studies of low temperature diffusion of boron in 3C-SiC IG Atabaev, CC Tin, BG Atabaev, TM Saliev, EN Bakhranov, ... Materials Science Forum 600, 457-460, 2009 | 10 | 2009 |
| Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron IG Atabaev, KN Juraev Advances in Materials Science and Engineering 2018 (1), 8797031, 2018 | 9 | 2018 |
| Low temperature impurity doping of silicon carbide CC Tin, AV Adedeji, IG Atabayev, BG Atabaev, TM Saliev, EN Bakhranov, ... US Patent 7,999,268, 2011 | 9 | 2011 |
| The method of solid state impurity diffusion and doping in 4H-SiC S Mendis, CC Tin, IG Atabaev, BG Atabaev International Journal of Fundamental Physical Sciences (IJFPS) 3 (4), 75-78, 2013 | 8 | 2013 |
| Excess tunneling currents in p-Si-n-3C-SiC heterostructures SZ Karazhanov, IG Atabaev, TM Saliev, ÉV Kanaki, E Dzhaksimov Semiconductors 35, 77-79, 2001 | 8 | 2001 |
| Fast Switching 4H‐SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al IG Atabaev, KN Juraev, VA Pak Advances in Condensed Matter Physics 2017 (1), 7820676, 2017 | 7 | 2017 |
| Influence of defects on low temperature diffusion of boron in SiC IG Atabaev, TM Saliev, D Saidov, VA Pak, K Juraev, CC Tin, BG Atabaev, ... Materials Sciences and Applications 2 (09), 1205, 2011 | 7 | 2011 |
| Low-temperature diffusion of lithium in silicon-germanium solid solutions IG Atabaev, NA Matchanov, EN Bakhranov Physics of the Solid State 43, 2234-2236, 2001 | 7 | 2001 |
| Bulk Si1− xGex single-and poly-crystals: a new prospective material for electronics IG Atabaev Computational materials science 21 (4), 526-529, 2001 | 7 | 2001 |
| A New Class of Nuclear Detectors Based on Si1–xGex MS Saidov, RA Muminov, IG Atabaev At. Energ 81 (4), 270-273, 1996 | 7 | 1996 |
| Modernization of an automated controlling system for heliostat field of big solar furnace IG Atabaev, ZS Akhatov, ED Mukhamediev, Z Zievaddinov Applied Solar Energy 52, 220-225, 2016 | 6 | 2016 |
| Structure Formation in the System TiO2–BaCO3 in Concentrated Solar Radiation IG Atabaev, SA Faiziev, MS Paizullakhanov Glass and Ceramics 73, 88-90, 2016 | 6 | 2016 |
| Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons MS Saidov, SL Lutpullaev, A Yusupov, IG Atabaev, LI Khirunenko, ... Physics of the Solid State 49, 1658-1660, 2007 | 6 | 2007 |
| Mechanism of defect formation in Si 1-x Ge x alloys irradiated with electrons IG Atabaev, MS Saidov, LI Khirunenko, VI Shakhovtsov, VK Shinkarenko, ... Soviet Physics-Semiconductors (English Translation) 21 (3), 350-351, 1987 | 6 | 1987 |
| ELECTROPHYSICAL PROPERTIES OF NEUTRON-TRANSMUTATION-DOPED SILICON-RICH SI-GE ALLOYS. 1. ELECTROPHYSICAL PARAMETERS AND EPSILON-1 CONDUCTION AG Zabrodskii, VA Evseev, RF Konopleva, VA CHEKANOV, ES YUROVA, ... SOVIET PHYSICS SEMICONDUCTORS-USSR 20 (11), 1278-1283, 1986 | 6 | 1986 |
K. N. JuraevPhysical Technical Institute of Uzbekistan Academy of Sciences在 uzsci.net 的电子邮件经过验证
