| Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 80 | 2019 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 2013 | 67 | 2013 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 56 | 2013 |
| A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0. 53Ga0. 47As capacitor structures J Lin, L Walsh, G Hughes, JC Woicik, IM Povey, TP O'Regan, PK Hurley Journal of Applied Physics 116 (2), 2014 | 51 | 2014 |
| Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22%(NH4) 2S surface treatments U Peralagu, IM Povey, P Carolan, J Lin, R Contreras-Guerrero, ... Applied Physics Letters 105 (16), 2014 | 25 | 2014 |
| Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ... 2D Materials 8 (2), 025008, 2020 | 22 | 2020 |
| Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to … J Lin, S Monaghan, K Cherkaoui, IM Povey, B Sheehan, PK Hurley Microelectronic Engineering 178, 204-208, 2017 | 22 | 2017 |
| The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors YC Fu, U Peralagu, DAJ Millar, J Lin, I Povey, X Li, S Monaghan, ... Applied Physics Letters 110 (14), 2017 | 21 | 2017 |
| A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si (100) metal-oxide-semiconductor structures LA Walsh, G Hughes, PK Hurley, J Lin, JC Woicik Applied Physics Letters 101 (24), 2012 | 20 | 2012 |
| A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems J Lin, S Monaghan, K Cherkaoui, IM Pove, ÉO Connor, B Sheehan, ... Microelectronic Engineering, 2015 | 18 | 2015 |
| The role of oxide traps aligned with the semiconductor energy gap in MOS systems E Caruso, J Lin, S Monaghan, K Cherkaoui, F Gity, P Palestri, D Esseni, ... IEEE Transactions on Electron Devices 67 (10), 4372-4378, 2020 | 17 | 2020 |
| Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/AlO/GaAs(100) metal-oxide-semiconductor structures LA Walsh, G Hughes, J Lin, PK Hurley, TP O’Regan, E Cockayne, ... Physical Review B 88 (4), 045322, 2013 | 12 | 2013 |
| Structural and electrical characterisation of PtS from H2S-converted Pt S Monaghan, EM Coleman, L Ansari, J Lin, A Buttimer, PA Coleman, ... Applied Materials Today 25, 101163, 2021 | 10 | 2021 |
| Investigating positive oxide charge in the SiO2/3C-SiC MOS system K Cherkaoui, A Blake, YY Gomeniuk, J Lin, B Sheehan, M White, ... AIP Advances 8 (8), 2018 | 8 | 2018 |
| Can metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP properties translate to metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET characteristics K Cherkaoui, V Djara, É O'Connor, J Lin, MA Negara, IM Povey, ... ECS Transactions 45 (3), 79, 2012 | 5 | 2012 |
| Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks E Caruso, J Lin, KF Burke, K Cherkaoui, D Esseni, F Gity, S Monaghan, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 4 | 2018 |
| Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics BF Zerbo, M Modreanu, I Povey, J Lin, A Létoublon, A Rolland, ... Crystals 12 (10), 1363, 2022 | 2 | 2022 |
| Large Area Growth of MoS2 By Chemical Vapour Deposition E Coleman, S Monaghan, F Gity, M Schmidt, J Connolly, J Lin, L Walsh, ... Electrochemical Society Meeting Abstracts aimes2018, 708-708, 2018 | 2 | 2018 |
| A spectroscopic method for the evaluation of surface passivation treatments on metal–oxide–semiconductor structures LA Walsh, PK Hurley, J Lin, E Cockayne, TP O’Regan, JC Woicik, ... Applied surface science 301, 40-45, 2014 | 2 | 2014 |
| Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs O Ignatova, U Peralagu, X Li, M Steer, M Mirza, J Lin, I Povey, P Carolan, ... 44th IEEE Semicond. Interface Spec. Conf.(SISC), Arlington, VA, USA, 167-168, 2013 | 2 | 2013 |
