| Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ... Journal of Physics D: Applied Physics 47 (17), 175103, 2014 | 88 | 2014 |
| P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan IEEE transactions on electron devices 60 (10), 3005-3011, 2013 | 78 | 2013 |
| First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan 72nd Device Research Conference, 259-260, 2014 | 63 | 2014 |
| Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ... Journal of electronic materials 42, 826-832, 2013 | 47 | 2013 |
| First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ... Semiconductor Science and Technology 27 (5), 055004, 2012 | 42 | 2012 |
| Dielectric function and optical properties of quaternary AlInGaN alloys E Sakalauskas, B Reuters, LR Khoshroo, H Kalisch, M Heuken, A Vescan, ... Journal of Applied Physics 110 (1), 2011 | 39 | 2011 |
| Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys FM Morales, JM Mánuel, R García, B Reuters, H Kalisch, A Vescan Journal of Physics D: Applied Physics 46 (24), 245502, 2013 | 33 | 2013 |
| Growth studies on quaternary AlInGaN layers for HEMT application B Reuters, A Wille, B Holländer, E Sakalauskas, N Ketteniss, C Mauder, ... Journal of electronic materials 41, 905-909, 2012 | 28 | 2012 |
| Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect … H Hahn, B Reuters, S Geipel, M Schauerte, F Benkhelifa, O Ambacher, ... Journal of Applied Physics 117 (10), 2015 | 27 | 2015 |
| AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal H Hahn, B Reuters, H Kalisch, A Vescan Semiconductor science and technology 28 (7), 074017, 2013 | 26 | 2013 |
| Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy B Reuters, M Finken, A Wille, B Holländer, M Heuken, H Kalisch, ... Journal of Applied Physics 112 (9), 2012 | 26 | 2012 |
| Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates C Mauder, B Reuters, LR Khoshroo, MV Rzheutskii, EV Lutsenko, ... Journal of crystal growth 312 (11), 1823-1827, 2010 | 25 | 2010 |
| Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates B Reuters, J Strate, H Hahn, M Finken, A Wille, M Heuken, H Kalisch, ... Journal of crystal growth 391, 33-40, 2014 | 23 | 2014 |
| Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices N Ketteniss, A Askar, B Reuters, A Noculak, B Holländer, H Kalisch, ... Semiconductor science and technology 27 (5), 055012, 2012 | 21 | 2012 |
| First small-signal data of GaN-based p-channel heterostructure field effect transistors H Hahn, B Reuters, A Pooth, A Noculak, H Kalisch, A Vescan Japanese Journal of Applied Physics 52 (12R), 128001, 2013 | 16 | 2013 |
| Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ... Journal of crystal growth 315 (1), 246-249, 2011 | 16 | 2011 |
| Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0) B Reuters, J Strate, A Wille, M Marx, G Lükens, L Heuken, M Heuken, ... Journal of Physics D: Applied Physics 48 (48), 485103, 2015 | 15 | 2015 |
| Characterization of GaN-based p-channel device structures at elevated temperatures H Hahn, B Reuters, A Pooth, H Kalisch, A Vescan Semiconductor Science and Technology 29 (7), 075002, 2014 | 14 | 2014 |
| Epitaxy and characterisation of AlInGaN heterostructures for HEMT application LR Khoshroo, C Mauder, H Behmenburg, J Woitok, W Zander, J Gruis, ... physica status solidi c 6 (S2 2), S470-S473, 2009 | 14 | 2009 |
| Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, ... Semiconductor science and technology 26 (10), 105017, 2011 | 12 | 2011 |
