| Investigation of optical properties of nanoporous GaN films AP Vajpeyi, S Tripathy, SJ Chua, EA Fitzgerald Physica E: Low-dimensional Systems and Nanostructures 28 (2), 141-149, 2005 | 117 | 2005 |
| High optical quality nanoporous GaN prepared by photoelectrochemical etching AP Vajpeyi, SJ Chua, S Tripathy, EA Fitzgerald, W Liu, P Chen, LS Wang Electrochemical and Solid-State Letters 8 (4), G85, 2005 | 74 | 2005 |
| Nanopore morphology in porous GaN template and its effect on the LEDs emission KKAASJC C B Soh, C B Tay, Rayson J N Tan, A P Vajpeyi, I P Journal of Physics D Applied Physics 46 (36), 2013 | 50 | 2013 |
| InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy AP Vajpeyi, AO Ajagunna, K Tsagaraki, M Androulidaki, A Georgakilas Nanotechnology 20 (32), 325605, 2009 | 37 | 2009 |
| Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy AP Vajpeyi, AO Ajagunna, G Tsiakatouras, A Adikimenakis, E Iliopoulos, ... Microelectronic engineering 86 (4-6), 812-815, 2009 | 27 | 2009 |
| Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching AP Vajpeyi, SJ Chua, S Tripathy, EA Fitzgerald Applied Physics Letters 91 (8), 2007 | 24 | 2007 |
| Effect of substrate temperature on spontaneous GaN nanowire growth and optoelectronic properties AP Vajpeyi, A Georgakilas, G Tsiakatouras, K Tsagaraki, M Androulidaki, ... Physica E: Low-dimensional Systems and Nanostructures 41 (3), 427-430, 2009 | 18 | 2009 |
| Growth optimization and characterization of lattice-matched Al0. 82In0. 18N optical confinement layer for edge emitting nitride laser diodes H Kim-Chauveau, E Frayssinet, B Damilano, P De Mierry, L Bodiou, ... Journal of crystal growth 338 (1), 20-29, 2012 | 15 | 2012 |
| Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN CB Soh, W Liu, H Hartono, NSS Ang, SJ Chua, SY Chow, CB Tay, ... Applied Physics Letters 98 (19), 2011 | 14 | 2011 |
| Negative differential resistance in GaN nanowire network M Dragoman, G Konstantinidis, A Cismaru, D Vasilache, A Dinescu, ... Applied Physics Letters 96 (5), 2010 | 13 | 2010 |
| Influence of rapid thermal annealing on the luminescence properties of nanoporous GaN films AP Vajpeyi, S Tripathy, SR Shannigrahi, BC Foo, LS Wang, SJ Chua, ... Electrochemical and solid-state letters 9 (4), G150, 2006 | 13 | 2006 |
| Microstructure of N‐face InN grown on Si (111) by plasma‐assisted MBE using a thin GaN–AlN buffer layer GP Dimitrakopulos, T Kehagias, A Ajagunna, J Kioseoglou, I Kerasiotis, ... physica status solidi (a) 207 (5), 1074-1078, 2010 | 9 | 2010 |
| Optical activation of Eu ions in nanoporous GaN films AP Vajpeyi, S Tripathy, LS Wang, BC Foo, SJ Chua, EA Fitzgerald, ... Journal of applied physics 99 (10), 2006 | 9 | 2006 |
| Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes JYDBC Ragh Charash, Hyonju Kim-Chauveau, Agam Vajpeyi Phy. Stat. Solidi (C) 8, 2011 | 6 | 2011 |
| Electron microscopy of InGaN nanopillars spontaneously grown on Si (111) substrates T Kehagias, I Kerasiotis, AP Vajpeyi, I Hausler, W Neumann, ... physica status solidi c 7 (5), 1305-1308, 2010 | 5 | 2010 |
| Structural modifications in InP nanostructures prepared by Ar+-ion irradiation SK Mohanta, RK Soni, NN Gosvami, AP Vajpeyi, S Tripathy Journal of Applied Physics 102 (7), 2007 | 4 | 2007 |
| High optical quality GaN nanopillars grown on (111) Si using molecular beam epitaxy AP Vajpeyi, G Tsiakatouras, A Adikimenakis, K Tsagaraki, M Androulidaki, ... MRS Online Proceedings Library (OPL) 1068, 1068-C06-08, 2008 | 2 | 2008 |
| Growth optimization and characterization of lattice-matched Al 0.82In 0.18N optical confinement layer for edge emitting nitride laser diodes H Kim-Chauveau, E Frayssinet, B Damilano, P De Journal of Crystal growth 38 (1), 20-29, 2012 | | 2012 |
| Comparative Study of Optical Properties of Nanoporous GaN Prepared by UV-Assisted Electrochemical and Electroless Etching S Tripathy, A Vajpeyi, SJ Chua, J Arokiaraj ECS Meeting Abstracts, 744, 2006 | | 2006 |
| COMPARATIVE STUDY OF OPTICAL PROPERTIES OF NANOPOROUS GaN PREPARED BY UV-ASSISTED ELECTROCHEMICAL AND ELECTROLESS ETCHING b a, b b AP Vajpeyi, S. Tripathy, SJ Chua, J … AP Vajpeyi State-of-the-Art Program on Compound Semiconductors:(SOTAPOCS XLII) and …, 2005 | | 2005 |
