| Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm SK Ryoo, KD Kim, HW Park, YB Lee, SH Lee, IS Lee, S Byun, D Shim, ... Advanced Electronic Materials 8 (11), 2200726, 2022 | 26 | 2022 |
| Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film YB Lee, BY Kim, HW Park, SH Lee, M Oh, SK Ryoo, IS Lee, S Byun, ... Advanced Electronic Materials 8 (11), 2200310, 2022 | 24 | 2022 |
| Evolution of the ferroelectric properties of AlScN film by electrical cycling with an inhomogeneous field distribution KD Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, S Byun, JH Lee, H Kim, ... Advanced Electronic Materials 9 (5), 2201142, 2023 | 21 | 2023 |
| Influences of the inhomogeneity of the ferroelectric thin films on switching current K Do Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, S Byun, JH Lee, H Kim, ... MRS Communications 13 (5), 825-833, 2023 | 6 | 2023 |
| Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3 Triple‐Layer Structure HW Park, M Oh, IS Lee, S Byun, YH Jang, YB Lee, BY Kim, SH Lee, ... Advanced Functional Materials 33 (9), 2206637, 2023 | 6 | 2023 |
| Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors BY Kim, IS Lee, HW Park, YB Lee, SH Lee, M Oh, SK Ryoo, SR Byun, ... Advanced Materials Technologies 8 (16), 2300146, 2023 | 5 | 2023 |
| Impact of operation voltage and NH 3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering K Do Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, SY Byun, JH Lee, ... Nanoscale 15 (40), 16390-16402, 2023 | 4 | 2023 |
| Atomic layer deposition of HfN x films and improving the film performance by annealing under NH 3 atmosphere SK Ryoo, BY Kim, YB Lee, HW Park, SH Lee, M Oh, IS Lee, SY Byun, ... Journal of Materials Chemistry C 11 (24), 8018-8026, 2023 | 3 | 2023 |
| Understanding phase evolution of ferroelectric Hf 0.5 Zr 0.5 O 2 thin films with Al 2 O 3 and Y 2 O 3 inserted layers J Shin, H Seo, KH Ye, YH Jang, DS Kwon, J Lim, TK Kim, H Paik, H Song, ... Journal of Materials Chemistry C 12 (14), 5035-5046, 2024 | 2 | 2024 |
| Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure HW Park, S Byun, KD Kim, SK Ryoo, IS Lee, YB Lee, SH Lee, HW Nam, ... Advanced Functional Materials 33 (51), 2304754, 2023 | 2 | 2023 |
| Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect KD Kim, SK Ryoo, HS Park, S Choi, TW Park, MK Yeom, CS Hwang Journal of Applied Physics 136 (2), 2024 | | 2024 |
| Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks JW Jeon, B Park, YH Jang, SH Lee, S Jeon, J Han, SK Ryoo, KD Kim, ... ACS Applied Materials & Interfaces 16 (12), 15032-15042, 2024 | | 2024 |
