关注
Kavita Vishwakarma
Kavita Vishwakarma
Inter-University Microelectronics Center
在 imec.be 的电子邮件经过验证
标题
引用次数
引用次数
年份
Quantum-coupled borophene-based heterolayers for excitonic and molecular sensing applications
K Vishwakarma, S Rani, S Chahal, CY Lu, SJ Ray, CS Yang, P Kumar
Physical Chemistry Chemical Physics 24 (21), 12816-12826, 2022
282022
Rheological and mechanical properties of PMMA/organoclay nanocomposites prepared via ultrasound-assisted in-situ emulsion polymerization
MK Poddar, K Vishwakarma, VS Moholkar
Korean Journal of Chemical Engineering 36, 828-836, 2019
132019
Ultrasound assisted synthesis of polymer nanocomposites: a review
V Soman, K Vishwakarma, MK Poddar
Journal of Polymer Research 30 (11), 406, 2023
82023
Symmetric Linear Rise and Fall of Conductance in a Trilayer Stack Engineered ReRAM-Based Synapse
K Vishwakarma, R kishore, A Datta
ACS Applied Electronic Materials 2 (10), 3263-3269, 2020
82020
Impact of nonuniform ozone anneal treatment on the resistance levels in an IGZO-ReRAM fabricated on ITO-coated glass substrate
R Kishore, K Vishwakarma, A Datta
IEEE Transactions on Electron Devices 68 (12), 6087-6093, 2021
72021
Sub-pico-second hole generation lifetime in thin film IGZO sputtered and annealed on p-silicon substrate
R Kishore, K Vishwakarma, A Datta
IEEE Transactions on Nanotechnology 20, 392-399, 2021
42021
Indium–Gallium–Zinc Oxide (IGZO)-based ReRAM: Material Overview, Latest Development and Technology Perspective
A Datta, R Kishore, K Vishwakarma
22023
Distribution of Process Induced Traps in Ozone Annealed Indium-Gallium-Zinc-Oxide Film Determined from Noise Characterization
R Kishore, K Vishwakarma, H Vaibhav, A Datta
IEEE Electron Device Letters, 2023
12023
Effect of Non-identical Annealing on the Breakdown Characteristics of Sputtered IGZO Films
R Kishore*, K Vishwakarma*, A Datta
2022 IEEE International Reliability Physics Symposium (IRPS), P24-1-P24-4, 2022
12022
Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability
K Vishwakarma, R Kishore, A Datta
IEEE Transactions on Device and Materials Reliability 21 (4), 587-593, 2021
12021
Gate oxide reliability: upcoming trends, challenges, and opportunities
B Kaczer, R Degraeve, J Franco, T Grasser, PJ Roussel, E Bury, P Weckx, ...
2024 IEEE Silicon Nanoelectronics Workshop (SNW), 3-4, 2024
2024
Pulsed Low-Frequency Noise Characterization on Al/ZnO/Al ReRAM to Investigate the Role of Deep-Level Oxygen Vacancy State in HRS Leakage
K Vishwakarma, R Kishore, A Datta
IEEE Transactions on Electron Devices, 2023
2023
Spectral Response of Solar Blind MSM Photodetector With InGaZnO Film Sputter Deposited in Diluted Oxygen Ambience
R Kishore, K Vishwakarma, A Datta
IEEE Journal of Quantum Electronics 59 (4), 1-7, 2023
2023
Reliability of InGaZnO Transparent ReRAM with Optically Active Pt-Nanodisks
K Vishwakarma, R Kishore, S Gora, M Jangra, A Datta
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
2023
Formation of Remote Quantum Point Contact Inside Dielectric Medium of an AlOx/SiOx ReRAM
K Vishwakarma, R Kishore, A Datta
IEEE Transactions on Electron Devices 69 (12), 6738-6744, 2022
2022
Impact of Bias Temperature Stress on IGZO/Ni/IGZO Steep Subthreshold Vertical Current Driver Fabricated at Room Temperature
R Kishore, K Vishwakarma, A Datta
IEEE Transactions on Device and Materials Reliability 21 (2), 273-278, 2021
2021
系统目前无法执行此操作,请稍后再试。
文章 1–16