受强制性开放获取政策约束的文章 - Manohar Lal了解详情
无法在其他位置公开访问的文章：9 篇
Nanometer‐scale uniform conductance switching in molecular memristors
S Goswami, D Deb, A Tempez, M Chaigneau, SP Rath, M Lal, Ariando, ...
Advanced Materials 32 (42), 2004370, 2020
强制性开放获取政策： Department of Science & Technology, India, A*Star, Singapore, National …
First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation …
CK Chen, Z Fang, S Hooda, M Lal, U Chand, Z Xu, J Pan, SH Tsai, ...
2022 International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2022
强制性开放获取政策： A*Star, Singapore
Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement …
S Hooda, CK Chen, M Lal, SH Tsai, E Zamburg, AVY Thean
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
强制性开放获取政策： A*Star, Singapore
Identifying Luminescent Boron Vacancies in h-BN Generated Using Controlled He+ Ion Irradiation
S Sarkar, Y Xu, S Mathew, M Lal, JY Chung, HY Lee, K Watanabe, ...
Nano Letters 24 (1), 43-50, 2023
强制性开放获取政策： National Research Foundation, Singapore
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory …
U Chand, MMS Aly, M Lal, C Chun-Kuei, S Hooda, SH Tsai, Z Fang, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
强制性开放获取政策： A*Star, Singapore
Control of stable magnetization states in permalloy nanorings using magnetic nanowires
M Lal, S Sakshath, D Venkateswarlu, PSA Kumar
Journal of Magnetism and Magnetic Materials 448, 153-158, 2018
强制性开放获取政策： Department of Science & Technology, India
Deterministic Switching of the Magnetization States in Cobalt Nanorings
M Lal, S Sakshath, PSA Kumar
IEEE Magnetics Letters 7, 1-5, 2016
强制性开放获取政策： Department of Science & Technology, India
BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s
S Hooda, M Lal, C Chun-Kuei, SH Tsai, E Zamburg, AVY Thean
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2023
强制性开放获取政策： A*Star, Singapore
Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
U Chand, C Chun-Kuei, M Lal, S Hooda, H Veluri, Z Fang, SH Tsai, ...
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
强制性开放获取政策： A*Star, Singapore
可在其他位置公开访问的文章：14 篇
A barium titanate‐on‐oxide insulator optoelectronics platform
Y Cao, SL Tan, EJH Cheung, SY Siew, C Li, Y Liu, CS Tang, M Lal, ...
Advanced Materials 33 (37), 2101128, 2021
强制性开放获取政策： National Research Foundation, Singapore
Study of quarkonium properties using SUSYQM method with baryonic chemical potential
S Solanki, M Lal, R Sharma, VK Agotiya
International Journal of Modern Physics A 37 (31n32), 2250196, 2022
强制性开放获取政策： Department of Science & Technology, India
Study of Differential Scattering Cross‐Section Using Yukawa Term of Medium‐Modified Cornell Potential
S Solanki, M Lal, VK Agotiya
Advances in High Energy Physics 2022 (1), 1456538, 2022
强制性开放获取政策： Department of Science & Technology, India
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
CK Chen, S Hooda, Z Fang, M Lal, Z Xu, J Pan, SH Tsai, E Zamburg, ...
IEEE Transactions on Electron Devices 70 (4), 2098-2105, 2023
强制性开放获取政策： A*Star, Singapore
Anisotropic Behavior of S‐Wave and P‐Wave States of Heavy Quarkonia at Finite Magnetic Field
M Lal, S Solanki, R Sharma, VK Agotiya
Advances in High Energy Physics 2023 (1), 6922729, 2023
强制性开放获取政策： Department of Science & Technology, India
Holographic imaging of antiferromagnetic domains with in-situ magnetic field
J Harrison, H Jani, J Hu, M Lal, JC Lin, H Popescu, J Brown, N Jaouen, ...
Optics Express 32 (4), 5885-5897, 2024
强制性开放获取政策： A*Star, Singapore, UK Engineering and Physical Sciences Research Council …
Charmonium Suppression in an Anisotropic Hot Qcd Medium Using Quasi-Particle Model
S Solanki, M Lal, R sharma, VK Agotiya
ECS Transactions 107 (1), 2127, 2022
强制性开放获取政策： Department of Science & Technology, India
Quarkonium dissociation properties at finite chemical potential in relativistic heavy ion collisions
VK Agotiya, S Solanki, M Lal
Journal of Physics: Conference Series 1849 (1), 012033, 2021
强制性开放获取政策： Department of Science & Technology, India
Dissociation of And Using Dissociation Energy Criteria in-Dimensional Space
VK Agotiya, S Solanki, M Lal
Advances in High Energy Physics, 2024
强制性开放获取政策： Department of Science & Technology, India
Dissociation of J/ψ and Y Using Dissociation Energy Criteria in N‐Dimensional Space
S Solanki, M Lal, VK Agotiya
Advances in High Energy Physics 2024 (1), 1045067, 2024
强制性开放获取政策： Department of Science & Technology, India
Research Article Anisotropic Behavior of S-Wave and P-Wave States of Heavy Quarkonia at Finite Magnetic Field
M Lal, S Solanki, R Sharma, VK Agotiya
强制性开放获取政策： Department of Science & Technology, India
出版信息和资助信息由计算机程序自动确定