| Determination of stress components in 4H-SiC power devices via Raman spectroscopy R Sugie, T Uchida Journal of Applied Physics 122 (19), 2017 | 56 | 2017 |
| Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration Y Mizushima, Y Kim, T Nakamura, R Sugie, H Hashimoto, A Uedono, ... Japanese Journal of Applied Physics 53 (5S2), 05GE04, 2014 | 46 | 2014 |
| Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy R Sugie, K Kosaka, H Seki, H Hashimoto, M Yoshikawa Journal of Applied Physics 114 (23), 2013 | 30 | 2013 |
| Stress characterization of si by a scanning near-field optical Raman microscope with spatial resolution and with penetration depth at the nanometer level, using resonant Raman … M Yoshikawa, M Murakami, K Matsuda, R Sugie, H Ishida, R Shimizu Japanese journal of applied physics 45 (5L), L486, 2006 | 22 | 2006 |
| Thermoplastic resin composition and sheets and cards made from the same R Sugie, T Nishimura, M Hiratsuka US Patent 6,333,113, 2001 | 20 | 2001 |
| Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence M Yoshikawa, R Sugie, M Murakami, T Matsunobe, K Matsuda, H Ishida Applied physics letters 88 (16), 2006 | 18 | 2006 |
| Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence R Sugie, T Uchida, K Kosaka, K Matsumura Japanese Journal of Applied Physics 55 (4S), 04ER03, 2016 | 16 | 2016 |
| Investigation of stress-induced defects in shallow trench isolation by cathodoluminescence and Raman spectroscopies R Sugie, K Matsuda, T Ajioka, M Yoshikawa, T Mizukoshi, K Shibusawa, ... Journal of applied physics 100 (6), 2006 | 15 | 2006 |
| Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using … Y Nagasawa, R Sugie, K Kojima, A Hirano, M Ippommatsu, Y Honda, ... Journal of Applied Physics 126 (21), 2019 | 14 | 2019 |
| Characterization of damage in SiO2 during helium ion microscope observation by luminescence and TEM-EELS S Ogawa, T Iijima, S Awata, R Sugie, N Kawasaki, Y Otsuka Microscopy and Microanalysis 18 (S2), 814-815, 2012 | 13 | 2012 |
| Measurement of the properties of GaN layers using terahertz time‐domain spectroscopic ellipsometry K Tachi, S Asagami, T Fujii, T Araki, Y Nanishi, T Nagashima, T Iwamoto, ... physica status solidi (b) 254 (8), 1600767, 2017 | 11 | 2017 |
| Detailed analysis of Ga-rich current pathways created in an n-Al0. 7Ga0. 3N layer grown on an AlN template with dense macrosteps Y Nagasawa, A Hirano, M Ippommatsu, H Sako, A Hashimoto, R Sugie, ... Applied Physics Express 13 (12), 124001, 2020 | 10 | 2020 |
| Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence R Sugie, K Inoue, M Yoshikawa Journal of Applied Physics 112 (3), 2012 | 10 | 2012 |
| Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors R Sugie, T Mitani, M Yoshikawa, Y Iwata, R Satoh Japanese Journal of Applied Physics 49 (4S), 04DP15, 2010 | 10 | 2010 |
| Raman scattering of interface modes in ZnTe–CdSe superlattices R Sugie, H Ohta, H Harima, S Nakashima, H Fujiyasu Journal of applied physics 80 (10), 5946-5950, 1996 | 9 | 1996 |
| Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy T Araki, S Kayamoto, Y Wada, Y Kuroda, D Nakayama, N Goto, M Deura, ... Applied Physics Express 16 (2), 025504, 2023 | 8 | 2023 |
| Characterization of defect structure in epilayer grown on on-axis sic by synchrotron X-ray topography K Ishiji, M Kato, R Sugie Journal of Electronic Materials 51 (4), 1541-1547, 2022 | 8 | 2022 |
| Expansion of stacking faults by electron-beam irradiation in 4H-SiC diode structure R Sugie, M Yoshikawa, S Harada, Y Namikawa Materials Science Forum 600, 353-356, 2009 | 8 | 2009 |
| An application of cathodoluminescence to optimize the shallow trench isolation process T Mizukoshi, K Shibusawa, S Yo, R Sugie, T Ajioka IEEE transactions on semiconductor manufacturing 18 (4), 546-553, 2005 | 8 | 2005 |
| Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3 R Sugie, T Uchida, A Hashimoto, S Akahori, K Matsumura, Y Tanii Applied Physics Express 13 (12), 126502, 2020 | 7 | 2020 |
