| Optically tunable amino‐functionalized graphene quantum dots H Tetsuka, R Asahi, A Nagoya, K Okamoto, I Tajima, R Ohta, A Okamoto Advanced Materials 24 (39), 5333-5338, 2012 | 949 | 2012 |
| Ultrahigh-quality silicon carbide single crystals D Nakamura, I Gunjishima, S Yamaguchi, T Ito, A Okamoto, H Kondo, ... Nature 430 (7003), 1009-1012, 2004 | 531 | 2004 |
| Selective synthesis of double-wall carbon nanotubes by CCVD of acetylene using zeolite supports T Hiraoka, T Kawakubo, J Kimura, R Taniguchi, A Okamoto, T Okazaki, ... Chemical Physics Letters 382 (5-6), 679-685, 2003 | 165 | 2003 |
| Control of diameter distribution of single-walled carbon nanotubes using the zeolite-CCVD method at atmospheric pressure A Okamoto, H Shinohara Carbon 43 (2), 431-436, 2005 | 108 | 2005 |
| Growth of carbon nanowalls on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition K Tanaka, M Yoshimura, A Okamoto, K Ueda Japanese journal of applied physics 44 (4R), 2074, 2005 | 79 | 2005 |
| Method of producing single crystals and a seed crystal used in the method Y Kitou, N Sugiyama, A Okamoto, T Tani, N Kamiya US Patent 5,944,890, 1999 | 51 | 1999 |
| Step structures and dislocations of SiC single crystals grown by modified Lely method N Sugiyama, A Okamoto, K Okumura, T Tani, N Kamiya Journal of crystal growth 191 (1-2), 84-91, 1998 | 49 | 1998 |
| Thermal and electrical conduction properties of vertically aligned carbon nanotubes produced by water-assisted chemical vapor deposition A Okamoto, I Gunjishima, T Inoue, M Akoshima, H Miyagawa, T Nakano, ... Carbon 49 (1), 294-298, 2011 | 47 | 2011 |
| Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal H Kondo, E Oguri, F Hirose, D Nakamura, A Okamoto, N Sugiyama US Patent 6,786,969, 2004 | 47 | 2004 |
| Synthesis of diameter-controlled carbon nanotubes using centrifugally classified nanoparticle catalysts T Inoue, I Gunjishima, A Okamoto Carbon 45 (11), 2164-2170, 2007 | 41 | 2007 |
| Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same A Okamoto, N Sugiyama, T Tani, N Kamiya, H Wakayama, Y Fukushima, ... US Patent 6,214,108, 2001 | 38 | 2001 |
| Method of producing silicon carbide single crystal N Sugiyama, A Okamoto, T Tani, N Kamiya US Patent 5,964,944, 1999 | 32 | 1999 |
| Synthesis of vertically aligned, double-walled carbon nanotubes from highly active Fe–V–O nanoparticles I Gunjishima, T Inoue, S Yamamuro, K Sumiyama, A Okamoto Carbon 45 (6), 1193-1199, 2007 | 30 | 2007 |
| Method and apparatus for fabricating high quality single crystal K Hara, K Futatsuyama, S Onda, F Hirose, E Oguri, N Sugiyama, ... US Patent 6,451,112, 2002 | 30 | 2002 |
| Synthesis and characterization of multi-and single-wall carbon nanotubes by the catalytic vapor deposition method A Okamoto, T Kawakubo, T Hiraoka, T Okazaki, T Sugai, H Shinohara Molecular Crystals and Liquid Crystals 387 (1), 93-98, 2002 | 28 | 2002 |
| The photoelastic constant and internal stress around micropipe defects of 6H-SiC single crystal T Kato, H Ohsato, A Okamoto, N Sugiyama, T Okuda Materials Science and Engineering: B 57 (2), 147-149, 1999 | 23 | 1999 |
| Antenna devices T Ito, A Okamoto, T Motohiro, T Nomura, M Hanazawa, T Ito, T Miyazaki, ... US Patent 8,537,071, 2013 | 20 | 2013 |
| Pressure-welded semiconductor device Y Miyachi, A Okamoto US Patent 6,987,320, 2006 | 19 | 2006 |
| Equipment and method for manufacturing silicon carbide single crystal N Sugiyama, Y Kitou, E Makino, K Hara, K Futatsuyama, A Okamoto US Patent 7,217,323, 2007 | 17 | 2007 |
| Growth of vertically aligned carbon nanotubes from highly active Fe–Ti–O nanoparticles prepared by liquid-phase synthesis I Gunjishima, T Inoue, S Yamamuro, K Sumiyama, A Okamoto Japanese journal of applied physics 46 (6R), 3700, 2007 | 15 | 2007 |
