| Analytic model for the surface potential and drain current in negative capacitance field-effect transistors D Jimenez, E Miranda, A Godoy IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010 | 165 | 2010 |
| Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures A Palma, A Godoy, JA Jimenez-Tejada, JE Carceller, ... Physical Review B 56 (15), 9565, 1997 | 165 | 1997 |
| Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer IEEE transactions on electron devices 55 (1), 411-416, 2007 | 101 | 2007 |
| A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007 | 95 | 2007 |
| High photocurrent in gated graphene–silicon hybrid photodiodes S Riazimehr, S Kataria, R Bornemann, P Haring Bolívar, FJG Ruiz, ... ACS photonics 4 (6), 1506-1514, 2017 | 94 | 2017 |
| Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of Applied Physics 100 (1), 2006 | 91 | 2006 |
| In-depth study of laser diode ablation of kapton polyimide for flexible conductive substrates FJ Romero, A Salinas-Castillo, A Rivadeneyra, A Albrecht, A Godoy, ... Nanomaterials 8 (7), 517, 2018 | 82 | 2018 |
| High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ... Acs Photonics 6 (1), 107-115, 2018 | 80 | 2018 |
| A simple subthreshold swing model for short channel MOSFETs A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz Solid-State Electronics 45 (3), 391-397, 2001 | 78 | 2001 |
| Laser-Fabricated reduced graphene oxide memristors FJ Romero, A Toral-Lopez, A Ohata, DP Morales, FG Ruiz, A Godoy, ... Nanomaterials 9 (6), 897, 2019 | 64 | 2019 |
| Resistive switching in graphene oxide FJ Romero, A Toral, A Medina-Rull, CL Moraila-Martinez, DP Morales, ... Frontiers in Materials 7, 17, 2020 | 56 | 2020 |
| Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz Solid-State Electronics 54 (2), 131-136, 2010 | 53 | 2010 |
| Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs JL Padilla, F Gamiz, A Godoy IEEE transactions on electron devices 59 (12), 3205-3211, 2012 | 48 | 2012 |
| Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz Solid-State Electronics 52 (12), 1854-1860, 2008 | 43 | 2008 |
| A simple approach to quantum confinement in tunneling field-effect transistors JL Padilla, F Gamiz, A Godoy IEEE electron device letters 33 (10), 1342-1344, 2012 | 42 | 2012 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 42 | 2010 |
| Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009 | 41 | 2009 |
| Effects of nonparabolic bands in quantum wires A Godoy, Z Yang, U Ravaioli, F Gámiz Journal of applied physics 98 (1), 2005 | 36 | 2005 |
| An analytical model for square GAA MOSFETs including quantum effects E Moreno, JB Roldan, FG Ruiz, D Barrera, A Godoy, F Gámiz Solid-State Electronics 54 (11), 1463-1469, 2010 | 35 | 2010 |
| Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration F Gamiz, JB Roldán, A Godoy, P Cartujo-Cassinello, JE Carceller Journal of applied physics 94 (9), 5732-5741, 2003 | 35 | 2003 |
Francisco G. RuizTenured Professor, University of Granada在 ugr.es 的电子邮件经过验证
