Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates S Solmi, A Parisini, R Angelucci, A Armigliato, D Nobili, L Moro Physical Review B 53 (12), 7836, 1996 | 163 | 1996 |
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon D Nobili, S Solmi, A Parisini, M Derdour, A Armigliato, L Moro Physical Review B 49 (4), 2477, 1994 | 120 | 1994 |
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 117 | 2017 |
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 113 | 2018 |
Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion L Jin, G Sirigu, X Tong, A Camellini, A Parisini, G Nicotra, C Spinella, ... Nano Energy 30, 531-541, 2016 | 98 | 2016 |
Wet Adsorption of a Luminescent EuIII complex on Carbon Nanotubes Sidewalls G Accorsi, N Armaroli, A Parisini, M Meneghetti, R Marega, M Prato, ... Advanced functional materials 17 (15), 2975-2982, 2007 | 78 | 2007 |
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ... Journal of applied physics 67 (5), 2320-2332, 1990 | 76 | 1990 |
Optical absorption near the fundamental absorption edge in GaSb C Ghezzi, R Magnanini, A Parisini, B Rotelli, L Tarricone, A Bosacchi, ... Physical Review B 52 (3), 1463, 1995 | 69 | 1995 |
Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots H Zhao, G Sirigu, A Parisini, A Camellini, G Nicotra, F Rosei, V Morandi, ... Nanoscale 8 (7), 4217-4226, 2016 | 67 | 2016 |
The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019 | 65 | 2019 |
Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation S Nicoletti, L Dori, GC Cardinali, A Parisini Sensors and Actuators B: Chemical 60 (2-3), 90-96, 1999 | 64 | 1999 |
Permeated porous silicon for hydrocarbon sensor fabrication R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, A Tagliani, ... Sensors and Actuators A: Physical 74 (1-3), 95-99, 1999 | 64 | 1999 |
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions R Marega, G Accorsi, M Meneghetti, A Parisini, M Prato, D Bonifazi Carbon 47 (3), 675-682, 2009 | 62 | 2009 |
Investigation on indium diffusion in silicon S Solmi, A Parisini, M Bersani, D Giubertoni, V Soncini, G Carnevale, ... Journal of applied physics 92 (3), 1361-1366, 2002 | 58 | 2002 |
Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon JL Allain, JR Regnard, A Bourret, A Parisini, A Armigliato, G Tourillon, ... Physical Review B 46 (15), 9434, 1992 | 56 | 1992 |
Arsenic uphill diffusion during shallow junction formation M Ferri, S Solmi, A Parisini, M Bersani, D Giubertoni, M Barozzi Journal of Applied Physics 99 (11), 2006 | 55 | 2006 |
Si and Sn doping of ε-Ga2O3 layers A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ... APL Materials 7 (3), 2019 | 54 | 2019 |
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions G Lulli, A Parisini, G Mattei Ultramicroscopy 60 (2), 187-194, 1995 | 54 | 1995 |
Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV R Ferrini, G Guizzetti, M Patrini, A Parisini, L Tarricone, B Valenti The European Physical Journal B-Condensed Matter and Complex Systems 27 (4 …, 2002 | 51 | 2002 |
Experimental evidence of delocalization in correlated disorder superlattices V Bellani, E Diez, A Parisini, L Tarricone, R Hey, GB Parravicini, ... Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 823-826, 2000 | 46 | 2000 |