Jonathan J. Wierer, Jr. 个人学术档案

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Mike KramesArkesso, LLC; ORCID 0000-0001-8545-851X在 arkesso.com 的电子邮件经过验证
Daniel KoleskeTechnical Staff, Sandia National Laboratories在 sandia.gov 的电子邮件经过验证
Jeff TsaoSandia National Laboratories在 sandia.gov 的电子邮件经过验证
A. A. AllermanSandia National Laboratories在 sandia.gov 的电子邮件经过验证
George T. WangSandia National Laboratories在 sandia.gov 的电子邮件经过验证
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]在 adelaide.edu.au 的电子邮件经过验证
Mihail SigalasProfessor, Department of Materials Science, University of Patras在 upatras.gr 的电子邮件经过验证
Renbo SongLehigh University在 lehigh.edu 的电子邮件经过验证
Wei SunCoherent Corp.在 coherent.com 的电子邮件经过验证
Aurelien DavidGoogle在 polytechnique.org 的电子邮件经过验证
Andrew Y. KimLumileds在 alum.mit.edu 的电子邮件经过验证
Syed Ahmed Al MuyeedGoogle在 alum.lehigh.edu 的电子邮件经过验证
Xiongliang WeiR&D Engineer, Hisense photonics在 hisensebroadband.com 的电子邮件经过验证
Damir BorovacLehigh University在 lehigh.edu 的电子邮件经过验证
Matthew PeartMagneton Inc.在 magneton.net 的电子邮件经过验证
Alexander NeumannPostdoc at University of New Mexico在 chtm.unm.edu 的电子邮件经过验证
Lincoln J LauhonNorthwestern University在 northwestern.edu 的电子邮件经过验证
John A. RogersSimpson/Querrey Professor, Northwestern University在 northwestern.edu 的电子邮件经过验证
Chee-Keong TanAssistant Professor, Hong Kong University of Science and Technology (Guangzhou)在 ust.hk 的电子邮件经过验证
E. Fred Schubert, Future Chips Conste...Rensselaer Polytechnic Institute在 rpi.edu 的电子邮件经过验证

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Jonathan J. Wierer, Jr.

North Carolina State University, Department of Electrical and Computer Engineering

在 ncsu.edu 的电子邮件经过验证 - 首页

semiconductor devices III-nitride light-emitting diodes laser diodes power devices


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001	854	2001
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency JJ Wierer Jr, A David, MM Megens Nature Photonics 3 (3), 163-169, 2009	832	2009
Comparison between blue lasers and light-emitting diodes for future solid-state lighting JJ Wierer Jr., JY Tsao, DS Sizov Lasers and Photonics Reviews 7 (6), 963–993, 2013	571	2013
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004	501	2004
Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ... Advanced Optical Materials 2 (9), 809-836, 2014	392	2014
High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002	321	2002
Highly reflective ohmic contacts to III-nitride flip-chip LEDs DA Steigerwald, SD Lester, JJ Wierer Jr US Patent 6,573,537, 2003	288	2003
Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames Applied Physics Letters 86 (11), 2005	281	2005
Four-color laser white illuminant demonstrating high color-rendering quality A Neumann, JJ Wierer, W Davis, Y Ohno, SRJ Brueck, JY Tsao Optics express 19 (104), A982-A990, 2011	272	2011
Photonic crystal light emitting device JJ Wierer, MR Krames, JE Epler US Patent 7,675,084, 2010	262*	2010
High‐efficiency, microscale GaN light‐emitting diodes and their thermal properties on unusual substrates T Kim, YH Jung, J Song, D Kim, Y Li, H Kim, IS Song, JJ Wierer, HA Pao, ... small 8 (11), 1643-1649, 2012	233	2012
III-nitride light-emitting device with increased light generating capability MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ... US Patent 6,486,499, 2002	214	2002
Photonic crystal light emitting device JJ Wierer Jr, MR Krames, MM Sigalas US Patent 7,012,279, 2006	210	2006
Semiconductor light emitting devices NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames US Patent 6,847,057, 2005	199	2005
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ... Applied Physics Letters 82 (14), 2221-2223, 2003	189	2003
LED efficiency using photonic crystal structure JJW M. R. Krames, M. M. Sigalas US Patent App. 2003 0/141,507, 2003	184*	2003
LED including photonic crystal structure US Patent 7,279,718, 0	184*
Performance of high‐power AlInGaN light emitting diodes AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ... physica status solidi (a) 188 (1), 15-21, 2001	168	2001
III-Nitride Light-emitting device with increased light generating capability (US 6,521,914) MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ... US Patent 6,521,914, 2003	158	2003
Method of making a III-nitride light-emitting device with increased light generating capability JJ Wierer Jr, MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar US Patent 6,514,782, 2003	150	2003

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