| Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee Advanced Materials 30 (18), 1705540, 2018 | 79 | 2018 |
| Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields J Pak, Y Jang, J Byun, K Cho, TY Kim, JK Kim, BY Choi, J Shin, Y Hong, ... ACS nano 12 (7), 7109-7116, 2018 | 61 | 2018 |
| Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors J Jang, JK Kim, J Shin, J Kim, KY Baek, J Park, S Park, YD Kim, ... Science advances 8 (38), eabn3181, 2022 | 46 | 2022 |
| Mechanochemistry-driven engineering of 0D/3D heterostructure for designing highly luminescent Cs–Pb–Br perovskites KY Baek, W Lee, J Lee, J Kim, H Ahn, JI Kim, J Kim, H Lim, J Shin, YJ Ko, ... Nature communications 13 (1), 4263, 2022 | 39 | 2022 |
| Molecular Dopant‐Dependent Charge Transport in Surface‐Charge‐Transfer‐Doped Tungsten Diselenide Field Effect Transistors JK Kim, K Cho, J Jang, KY Baek, J Kim, J Seo, M Song, J Shin, J Kim, ... Advanced Materials 33 (44), 2101598, 2021 | 39 | 2021 |
| Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors J Kim, K Cho, J Pak, W Lee, J Seo, JK Kim, J Shin, J Jang, KY Baek, J Lee, ... ACS nano 16 (4), 5376-5383, 2022 | 21 | 2022 |
| Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors J Seo, K Cho, W Lee, J Shin, JK Kim, J Kim, J Pak, T Lee Nanoscale Research Letters 14, 1-10, 2019 | 16 | 2019 |
| Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing I Jeong, K Cho, S Yun, J Shin, J Kim, GT Kim, T Lee, S Chung ACS nano 16 (4), 6215-6223, 2022 | 15 | 2022 |
| Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS2 field-effect transistors J Pak, K Cho, JK Kim, Y Jang, J Shin, J Kim, J Seo, S Chung, T Lee Nano Futures 3 (1), 011002, 2019 | 14 | 2019 |
| Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS2 field effect transistors JK Kim, Y Song, TY Kim, K Cho, J Pak, BY Choi, J Shin, S Chung, T Lee Nanotechnology 28 (47), 47LT01, 2017 | 13 | 2017 |
| Resistive switching by percolative conducting filaments in organometal perovskite unipolar memory devices analyzed using current noise spectra H Ahn, K Kang, Y Song, W Lee, JK Kim, J Kim, J Lee, KY Baek, J Shin, ... Advanced Functional Materials 32 (4), 2107727, 2022 | 12 | 2022 |
| Dose-dependent effect of proton irradiation on electrical properties of WSe 2 ambipolar field effect transistors J Shin, K Cho, TY Kim, J Pak, JK Kim, W Lee, J Kim, S Chung, WK Hong, ... Nanoscale 11 (29), 13961-13967, 2019 | 8 | 2019 |
| Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors BY Choi, K Cho, J Pak, TY Kim, JK Kim, J Shin, J Seo, S Chung, T Lee Journal of the Korean Physical Society 72, 1203-1208, 2018 | 8 | 2018 |
| Tailored Design‐of‐Experiments Approach for Device Performance Prediction and Optimization of Flash‐Evaporated Organic–Inorganic Halide Perovskite‐Based Photodetectors J Lee, W Lee, J Lee, KY Baek, J Shin, JK Kim, J Kim, H Ahn, K Kang, ... Advanced Materials Technologies 6 (5), 2001131, 2021 | 5 | 2021 |
| Proton irradiation effects on mechanochemically synthesized and flash-evaporated hybrid organic–inorganic lead halide perovskites J Shin, KY Baek, J Lee, W Lee, J Kim, J Jang, J Park, K Kang, K Cho, ... Nanotechnology 33 (6), 065706, 2021 | 3 | 2021 |
| Field‐Effect Transistors: Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules (Adv. Mater. 18/2018) K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee Advanced Materials 30 (18), 1870129, 2018 | 1 | 2018 |
| Photo‐Responsive Molecular Junctions Activated by Perovskite/Graphene Heterostructure Electrode (Advanced Optical Materials 11/2022) C Lee, J Kim, J Lee, W Lee, M Song, KY Baek, J Shin, J Nam, J Lee, ... Advanced Optical Materials 10 (11), 2270041, 2022 | | 2022 |
| Photo‐Responsive Molecular Junctions Activated by Perovskite/Graphene Heterostructure Electrode C Lee, J Kim, J Lee, W Lee, M Song, KY Baek, J Shin, J Nam, J Lee, ... Advanced Optical Materials 10 (11), 2200049, 2022 | | 2022 |
| Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra (Adv. Funct. Mater. 4/2022). H Ahn, K Kang, Y Song, W Lee, JK Kim, J Kim, J Lee, KY Baek, J Shin, ... Advanced Functional Materials 32 (4), 2022 | | 2022 |
| Perovskite Photodetector Devices: Tailored Design‐of‐Experiments Approach for Device Performance Prediction and Optimization of Flash‐Evaporated Organic–Inorganic Halide … J Lee, W Lee, J Lee, KY Baek, J Shin, JK Kim, J Kim, H Ahn, K Kang, ... Advanced Materials Technologies 6 (5), 2170029, 2021 | | 2021 |
