NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet B Mukherjee, YQ Cai, HR Tan, YP Feng, ES Tok, CH Sow ACS APPLIED MATERIALS & INTERFACES 5 (19), 9594-9604, 2013 | 244 | 2013 |
Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible B Mukherjee, F Tseng, D Gunlycke, KK Amara, G Eda, E Simsek Optical Materials Express 5 (2), 447-455, 2015 | 140 | 2015 |
Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ... npj 2D Materials and Applications 1 (1), 34, 2017 | 99 | 2017 |
Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha ACS applied materials & interfaces 10 (42), 36512-36522, 2018 | 98 | 2018 |
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures B Mukherjee, A Zulkefli, K Watanabe, T Taniguchi, Y Wakayama, ... Advanced Functional Materials 30 (42), 2001688, 2020 | 65 | 2020 |
Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling B Mukherjee, N Kaushik, RPN Tripathi, AM Joseph, PK Mohapatra, ... Scientific reports 7 (1), 41175, 2017 | 61 | 2017 |
Electrical and photoresponse properties of Co3O4 nanowires B Varghese, B Mukherjee, KRG Karthik, KB Jinesh, SG Mhaisalkar, ... Journal of Applied Physics 111 (10), 104306-104306-6, 2012 | 53 | 2012 |
Utilization of monolayer MoS2 in Bragg stacks and metamaterial structures as broadband absorbers B Mukherjee, E Simsek Optics Communications 369, 89–93, 2016 | 35 | 2016 |
Cation exchange synthesis of uniform PbSe/PbS core/shell tetra-pods and their use as near-infrared photodetectors N Mishra, B Mukherjee, G Xing, S Chakrabortty, A Guchhait, JY Lim Nanoscale 8 (29), 14203-14212, 2016 | 35 | 2016 |
Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai ACS Photonics 6 (9), 2277-2286, 2019 | 31 | 2019 |
Plasmonics Enhanced Average Broadband Absorption of Monolayer MoS2 B Mukherjee, E Simsek Plasmonics 11, 285-289, 2016 | 31 | 2016 |
Stepped-surfaced GeSe2 Nanobelts with High-gain Photoconductivity B Mukherjee, Z Hu, M Zheng, Y Cai, YP Feng, ES TOK, CH Sow Journal of Materials Chemistry, 2012 | 31 | 2012 |
Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects B Mukherjee, ES Tok, CH Sow Journal of Applied Physics 114 (13), 2013 | 29 | 2013 |
Raman analysis of gold on WSe2 single crystal film B Mukherjee, WS Leong, Y Li, H Gong, L Sun, ZX Shen, E Simsek, ... Materials Research Express 2 (6), 065009, 2015 | 26 | 2015 |
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, Y Wakayama, ... ACS Applied Materials & Interfaces 13 (36), 43030-43038, 2021 | 24 | 2021 |
ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory B Mukherjee, R Hayakawa, K Watanabe, T Taniguchi, S Nakaharai, ... Advanced Electronic Materials 7 (1), 2000925, 2021 | 23 | 2021 |
K-Enriched WO3 Nanobundles: High Electrical Conductivity and Photocurrent with Controlled Polarity Z Hu, Z Ji, WW Lim, B Mukherjee, C Zhou, ES Tok, CH Sow ACS Applied Materials & Interfaces 5 (11), 4731-4738, 2013 | 23 | 2013 |
Direct laser micropatterning of GeSe2 nanostructures film with controlled optoelectrical properties B Mukherjee, G Murali, SX Lim, M Zheng, ES Tok, CH Sow RSC Advances 4 (20), 10013-10021, 2014 | 15 | 2014 |
Synthesis, characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays B Mukherjee, B Varghese, M Zheng, KRG Karthik, N Mathews, ... Journal of Crystal Growth 346 (1), 32-39, 2012 | 14 | 2012 |
Visibility of atomically-thin layered materials buried in silicon dioxide E Simsek, B Mukherjee Nanotechnology 26, 455701, 2015 | 12 | 2015 |