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Shah M Jahinuzzaman
Shah M Jahinuzzaman
Sr. Staff Engineer, Intel Corporation
在 intel.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
A soft error tolerant 10T SRAM bit-cell with differential read capability
SM Jahinuzzaman, DJ Rennie, M Sachdev
IEEE Transactions on Nuclear Science 56 (6), 3768-3773, 2009
3062009
Soft error susceptibilities of 22 nm tri-gate devices
N Seifert, B Gill, S Jahinuzzaman, J Basile, V Ambrose, Q Shi, R Allmon, ...
IEEE Transactions on Nuclear Science 59 (6), 2666-2673, 2012
2322012
Soft error rate improvements in 14-nm technology featuring second-generation 3D tri-gate transistors
N Seifert, S Jahinuzzaman, J Velamala, R Ascazubi, N Patel, B Gill, ...
IEEE Transactions on Nuclear Science 62 (6), 2570-2577, 2015
1332015
An analytical model for soft error critical charge of nanometric SRAMs
SM Jahinuzzaman, M Sharifkhani, M Sachdev
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 17 (9 …, 2009
1202009
Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress
SM Jahinuzzaman, A Sultana, K Sakariya, P Servati, A Nathan
Applied Physics Letters 87 (2), 2005
962005
TSPC-DICE: A single phase clock high performance SEU hardened flip-flop
SM Jahinuzzaman, R Islam
2010 53rd IEEE International Midwest Symposium on Circuits and Systems, 73-76, 2010
492010
A compact hybrid current/voltage sense amplifier with offset cancellation for high-speed SRAMs
M Sharifkhani, E Rahiminejad, SM Jahinuzzaman, M Sachdev
IEEE transactions on very large scale integration (VLSI) systems 19 (5), 883-894, 2010
392010
Susceptibility of planar and 3D tri-gate technologies to muon-induced single event upsets
N Seifert, S Jahinuzzaman, J Velamala, N Patel
2015 IEEE International Reliability Physics Symposium, 2C. 1.1-2C. 1.6, 2015
332015
Design and analysis of a 5.3-pJ 64-kb gated ground SRAM with multiword ECC
SM Jahinuzzaman, JS Shah, DJ Rennie, M Sachdev
IEEE Journal of Solid-State Circuits 44 (9), 2543-2553, 2009
312009
Investigation of process impact on soft error susceptibility of nanometric SRAMs using a compact critical charge model
SM Jahinuzzaman, M Sharifkhani, M Sachdev
9th International Symposium on Quality Electronic Design (isqed 2008), 207-212, 2008
272008
Modeling and mitigation of soft errors in nanoscale SRAMs
SM Jahinuzzaman
University of Waterloo, 2008
142008
Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices
S Jahinuzzaman, B Gill, V Ambrose, N Seifert
2013 IEEE International Reliability Physics Symposium (IRPS), 3D. 1.1-3D. 1.6, 2013
132013
Soft error robust flip-flops
M Sachdev, SM Jahinuzzaman
US Patent 7,714,628, 2010
132010
Soft error robust impulse and TSPC flip-flops in 90nm CMOS
SM Jahinuzzaman, DJ Rennie, M Sachdev
2009 2nd Microsystems and Nanoelectronics Research Conference, 45-48, 2009
132009
A multiword based high speed ecc scheme for low-voltage embedded srams
S Jahinuzzaman, T Shakir, S Lubana, JS Shah, M Sachdev
ESSCIRC 2008-34th European Solid-State Circuits Conference, 226-229, 2008
122008
A read-decoupled gated-ground SRAM architecture for low-power embedded memories
W Hussain, SM Jahinuzzaman
Integration 45 (3), 229-236, 2012
102012
Dynamic data stability in low-power SRAM design
M Sharifkhani, SM Jahinuzzaman, M Sachdev
2007 IEEE Custom Integrated Circuits Conference, 237-240, 2007
92007
Dynamic data stability in SRAM cells and its implications on data stability tests
M Sharifkhani, SM Jahinuzzaman, M Sachdev
2006 IEEE International Workshop on Memory Technology, Design, and Testing …, 2006
82006
Soft error robust static random access memory cells
M Sachdev, SM Jahinuzzaman
US Patent 7,613,067, 2009
62009
A scalable offset-cancelled current/voltage sense amplifier
H Attarzadeh, M SharifKhani, SM Jahinuzzaman
Proceedings of 2010 IEEE International Symposium on Circuits and Systems …, 2010
52010
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