| Epitaxial growth of two-dimensional layered transition-metal dichalcogenides: growth mechanism, controllability, and scalability H Li, Y Li, A Aljarb, Y Shi, LJ Li Chemical reviews 118 (13), 6134-6150, 2017 | 347 | 2017 |
| Mixed-dimensional MXene-hydrogel heterostructures for electronic skin sensors with ultrabroad working range Y Cai, J Shen, CW Yang, Y Wan, HL Tang, AA Aljarb, C Chen, JH Fu, ... Science advances 6 (48), eabb5367, 2020 | 219 | 2020 |
| Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates S Park, N Mutz, T Schultz, S Blumstengel, A Han, A Aljarb, LJ Li, ... 2D Materials 5 (2), 025003, 2018 | 184 | 2018 |
| The development of integrated circuits based on two-dimensional materials K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung, X Zhang, HN Alshareef, ... Nature Electronics 4 (11), 775-785, 2021 | 183 | 2021 |
| Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides A Aljarb, Z Cao, HL Tang, JK Huang, M Li, W Hu, L Cavallo, LJ Li ACS nano 11 (9), 9215-9222, 2017 | 131 | 2017 |
| Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides A Aljarb, JH Fu, CC Hsu, CP Chuu, Y Wan, M Hakami, DR Naphade, ... Nature Materials 19 (12), 1300-1306, 2020 | 126 | 2020 |
| Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants S Park, T Schultz, X Xu, B Wegner, A Aljarb, A Han, LJ Li, VC Tung, ... Communications Physics 2 (1), 109, 2019 | 64 | 2019 |
| Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ... Nature nanotechnology 18 (9), 1044-1050, 2023 | 52 | 2023 |
| Low-defect-density WS2 by hydroxide vapor phase deposition Y Wan, E Li, Z Yu, JK Huang, MY Li, AS Chou, YT Lee, CJ Lee, HC Hsu, ... Nature Communications 13 (1), 4149, 2022 | 52 | 2022 |
| Metal‐guided selective growth of 2D materials: demonstration of a bottom‐up CMOS inverter MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ... Advanced Materials 31 (18), 1900861, 2019 | 48 | 2019 |
| Mo3+ hydride as the common origin of H2 evolution and selective NADH regeneration in molybdenum sulfide electrocatalysts JA Bau, AH Emwas, P Nikolaienko, AA Aljarb, V Tung, M Rueping Nature Catalysis 5 (5), 397-404, 2022 | 43 | 2022 |
| The Schottky–Mott rule expanded for two-dimensional semiconductors: Influence of substrate dielectric screening S Park, T Schultz, D Shin, N Mutz, A Aljarb, HS Kang, CH Lee, LJ Li, X Xu, ... ACS nano 15 (9), 14794-14803, 2021 | 37 | 2021 |
| Growth of 2H stacked WSe 2 bilayers on sapphire A Han, A Aljarb, S Liu, P Li, C Ma, F Xue, S Lopatin, CW Yang, JK Huang, ... Nanoscale Horizons 4 (6), 1434-1442, 2019 | 33 | 2019 |
| Type‐I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement S Park, N Mutz, SA Kovalenko, T Schultz, D Shin, A Aljarb, LJ Li, V Tung, ... Advanced Science 8 (12), 2100215, 2021 | 27 | 2021 |
| Two-dimensional plasmonic polarons in -doped monolayer F Caruso, P Amsalem, J Ma, A Aljarb, T Schultz, M Zacharias, V Tung, ... Physical Review B 103 (20), 205152, 2021 | 21 | 2021 |
| Electronic band dispersion determination in azimuthally disordered transition-metal dichalcogenide monolayers S Park, T Schultz, A Han, A Aljarb, X Xu, P Beyer, A Opitz, R Ovsyannikov, ... Communications Physics 2 (1), 68, 2019 | 20 | 2019 |
| Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures S Park, H Wang, T Schultz, D Shin, R Ovsyannikov, M Zacharias, ... Advanced Materials 33 (29), 2008677, 2021 | 19 | 2021 |
| Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion JT Ly, EK Burnett, S Thomas, A Aljarb, Y Liu, S Park, S Rosa, Y Yi, H Lee, ... ACS applied materials & interfaces 10 (46), 40070-40077, 2018 | 17 | 2018 |
| Aberration-corrected STEM imaging of 2D materials: Artifacts and practical applications of threefold astigmatism S Lopatin, A Aljarb, V Roddatis, T Meyer, Y Wan, JH Fu, M Hedhili, Y Han, ... Science advances 6 (37), eabb8431, 2020 | 15 | 2020 |
| Strain-directed layer-by-layer epitaxy toward van der Waals homo-and heterostructures Y Wan, JK Huang, CP Chuu, WT Hsu, CJ Lee, A Aljarb, CW Huang, ... ACS Materials Letters 3 (4), 442-453, 2021 | 14 | 2021 |
