| Phase selective growth and properties of rhombohedral and cubic indium oxide CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ... Applied physics letters 89 (1), 2006 | 131 | 2006 |
| Growth of cubic InN on -plane sapphire V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ... Applied physics letters 83 (17), 3468-3470, 2003 | 107 | 2003 |
| Influence of thermal annealing on PCDTBT: PCBM composition profiles O Synooka, KR Eberhardt, CR Singh, F Hermann, G Ecke, B Ecker, ... Advanced Energy Materials 4 (5), 1300981, 2014 | 64 | 2014 |
| Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt Thin Solid Films 359 (2), 146-149, 2000 | 64 | 2000 |
| Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties M Gubisch, Y Liu, L Spiess, H Romanus, S Krischok, G Ecke, JA Schaefer, ... Thin solid films 488 (1-2), 132-139, 2005 | 58 | 2005 |
| Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy V Cimalla, M Niebelschütz, G Ecke, V Lebedev, O Ambacher, ... physica status solidi (a) 203 (1), 59-65, 2006 | 56 | 2006 |
| Comparison of normal and inverse poly (3-hexylthiophene)/fullerene solar cell architectures M Al-Ibrahim, S Sensfuss, J Uziel, G Ecke, O Ambacher Solar Energy Materials and Solar Cells 85 (2), 277-283, 2005 | 56 | 2005 |
| Properties of rf-sputtered indium–tin-oxynitride thin films E Aperathitis, M Bender, V Cimalla, G Ecke, M Modreanu Journal of applied physics 94 (2), 1258-1266, 2003 | 55 | 2003 |
| Influence of ion implantation on titanium surfaces for medical applications S Krischok, C Blank, M Engel, R Gutt, G Ecke, J Schawohl, L Spieß, ... Surface Science 601 (18), 3856-3860, 2007 | 53 | 2007 |
| The role of Si as surfactant and donor in molecular-beam epitaxy of AlN V Lebedev, FM Morales, H Romanus, S Krischok, G Ecke, V Cimalla, ... Journal of applied physics 98 (9), 2005 | 53 | 2005 |
| The estimation of sputtering yields for SiC and Si G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 51 | 2002 |
| Reduced surface electron accumulation at InN films by ozone induced oxidation V Cimalla, V Lebedev, CY Wang, M Ali, G Ecke, VM Polyakov, F Schwierz, ... Applied physics letters 90 (15), 2007 | 48 | 2007 |
| Sputtering effects in hexagonal silicon carbide J Pezoldt, B Stottko, G Kupris, G Ecke Materials Science and Engineering: B 29 (1-3), 94-98, 1995 | 48 | 1995 |
| Dielectric function of “narrow” band gap InN R Goldhahn, S Shokhovets, V Cimalla, L Spiess, G Ecke, O Ambacher, ... MRS Online Proceedings Library (OPL) 743, L5. 9, 2002 | 47 | 2002 |
| Initial stages in the carbonization of (111) Si by solid-source molecular beam epitaxy V Cimalla, T Stauden, G Ecke, F Scharmann, G Eichhorn, J Pezoldt, ... Applied physics letters 73 (24), 3542-3544, 1998 | 44 | 1998 |
| Bonding mechanisms in laser-assisted joining of metal-polymer composites K Schricker, L Samfaß, M Grätzel, G Ecke, JP Bergmann Journal of advanced joining processes 1, 100008, 2020 | 41 | 2020 |
| Effect of annealing on the properties of Indium− Tin− oxynitride films as ohmic contacts for GaN-based optoelectronic devices M Himmerlich, M Koufaki, G Ecke, C Mauder, V Cimalla, JA Schaefer, ... ACS applied materials & interfaces 1 (7), 1451-1456, 2009 | 41 | 2009 |
| Tribological characteristics of WC1-x, W2C and WC tungsten carbide films M Gubisch, Y Liu, S Krischok, G Ecke, L Spiess, JA Schaefer, C Knedlik Tribology and Interface Engineering Series 48, 409-417, 2005 | 36 | 2005 |
| Investigations of MBE grown InN and the influence of sputtering on the surface composition S Krischok, V Yanev, O Balykov, M Himmerlich, JA Schaefer, R Kosiba, ... Surface science 566, 849-855, 2004 | 35 | 2004 |
| Sputtering‐induced surface roughness of polycrystalline Al films and its influence on AES depth profiles T Wöhner, G Ecke, H Roessler, S Hofmann Surface and Interface Analysis: An International Journal devoted to the …, 1998 | 33 | 1998 |
