| Growth of three-dimensional SiC clusters on Si modelled by KMC AA Schmidt, VS Kharlamov, KL Safonov, YV Trushin, EE Zhurkin, ... Computational materials science 33 (1-3), 375-381, 2005 | 23 | 2005 |
| Modelling the formation of nano-sized SiC on Si KL Safonov, AA Schmidt, DV Kulikov, V Cimalla, J Pezoldt Materials Science Forum 433, 591-594, 2003 | 16 | 2003 |
| Linear alignment of SiC dots on silicon substrates V Cimalla, AA Schmidt, T Stauden, K Zekentes, O Ambacher, J Pezoldt Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 14 | 2004 |
| Self-organized SiC nanostructures on silicon V Cimalla, AA Schmidt, C Foerster, K Zekentes, O Ambacher, J Pezoldt Superlattices and Microstructures 36 (1-3), 345-351, 2004 | 14 | 2004 |
| A new kinetic lattice Monte Carlo modeling framework for the source-drain selective epitaxial growth process R Chen, W Choi, A Schmidt, KH Lee, Y Park 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 13 | 2013 |
| Lateral alignment of SiC dots on Si V Cimalla, J Pezoldt, T Stauden, AA Schmidt, K Zekentes, O Ambacher physica status solidi (c) 1 (2), 337-340, 2004 | 9 | 2004 |
| Computer simulation of ferroelectric property changes in PLZT ceramics under neutron irradiation DV Kulikov, YV Trushin, VS Kharlamov, R Bittner, K Humer, HW Weber, ... Fourth International Workshop on Nondestructive Testing and Computer …, 2001 | 9 | 2001 |
| Simulation of quality of SiC/Si interface during MBE deposition of C on Si DV Kulikov, AA Schmidt, SA Korolev, FM Morales, T Stauden, YV Trushin, ... Materialwissenschaft und Werkstofftechnik: Entwicklung, Fertigung, Prüfung …, 2006 | 7 | 2006 |
| Carbon surface diffusion and SiC nanocluster self-ordering J Pezoldt, YV Trushin, VS Kharlamov, AA Schmidt, V Cimalla, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 5 | 2006 |
| Semiconductor device having impurity region Y Sasaki, BS Kim, TG Kim, Y Moriyama, SH Song, A Schmidt, A Yoo, ... US Patent 9,911,809, 2018 | 4 | 2018 |
| Compact process model of temperature dependent amorphization induced by ion implantation A Schmidt, I Jang, T Kim, KH Lee, YK Park, MH Yoo, CH Chung 2010 International Conference on Simulation of Semiconductor Processes and …, 2010 | 4 | 2010 |
| Multi-scale simulation of MBE-grown SiC/Si nanostructures AA Schmidt, YV Trushin, KL Safonov, VS Kharlamov, DV Kulikov, ... Materials science forum 527, 315-318, 2006 | 4 | 2006 |
| Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers VS Kharlamov, BJ Ber, YV Trushin, EE Zhurkin, AP Kovarski, AA Schmidt Fourth International Workshop on Nondestructive Testing and Computer …, 2001 | 4 | 2001 |
| Atomistic simulation flow for source-drain epitaxy and contact formation processes of advanced logic devices SY Lee, R Chen, A Schmidt, I Jang, DS Kim, C Ahn, W Choi, KH Lee 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 3 | 2016 |
| SIMS profiling of GaAs/δ-AlAs/GaAs/… heterostructures using polyatomic ionized oxygen clusters BY Ber, AP Kovarsky, DY Kazantsev, YV Trushin, EE Zhurkin, AA Schmidt, ... Technical physics letters 30, 836-838, 2004 | 3 | 2004 |
| Kinetic Monte Carlo simulation of SiC nucleation on Si (111) AA Schmidt, KL Safonov, YV Trushin, V Cimalla, O Ambacher, J Pezoldt physica status solidi (a) 201 (2), 333-337, 2004 | 3 | 2004 |
| Progress in dislocation stress field model and its appications U Kwon, JG Min, SY Lee, A Schmidt, DS Kim, Y Kayama, Y Nishizawa, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 2 | 2019 |
| Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure H Kubotera, Y Kayama, S Nagura, Y Usami, A Schmidt, U Kwon, KH Lee, ... 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 2 | 2014 |
| System and method of analyzing a crystal defect SB Shim, IG Shin, SY Lee, A Schmidt, SW Yi US Patent 10,727,025, 2020 | 1 | 2020 |
| Method of forming a semiconductor device having impurity region Y Sasaki, BS Kim, TG Kim, Y Moriyama, SH Song, A Schmidt, A Yoo, ... US Patent 10,164,017, 2018 | 1 | 2018 |
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