| Nitride semiconductor light emitting device and method of frabicating nitride semiconductor laser device T Kamikawa, Y Kawaguchi US Patent App. 12/382,530, 2009 | 70 | 2009 |
| Gallium nitride group compound semiconductor light-emitting device T Hata, T Morimoto, T Kamikawa, K Yamamoto US Patent 6,603,146, 2003 | 55 | 2003 |
| Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus Y Ueta, T Takakura, T Kamikawa, Y Tsuda, S Ito, T Yuasa, M Taneya, ... US Patent 7,462,882, 2008 | 51 | 2008 |
| Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus T Kamikawa, S Ito, M Taneya US Patent 7,180,487, 2007 | 44 | 2007 |
| Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus T Kamikawa, S Ito, M Taneya US Patent 6,628,249, 2003 | 44 | 2003 |
| Nitride semiconductor light emitting device Y Kawaguchi, T Kamikawa US Patent 7,792,169, 2010 | 38 | 2010 |
| Nitride semiconductor light-emitting device and method for fabrication thereof M Kondou, T Kamikawa, Y Kawaguchi US Patent 7,701,994, 2010 | 36 | 2010 |
| Nitride semiconductor device E Yamada, T Kamikawa, M Araki US Patent 8,368,183, 2013 | 35 | 2013 |
| Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage T Kamikawa, Y Kawaguchi, PO Vaccaro, S Ito, H Kawanishi Applied Physics Letters 95 (3), 2009 | 32 | 2009 |
| Nitride semiconductor light-emitting device and method for producing same T Takakura, S Ito, T Kamikawa US Patent 7,410,819, 2008 | 30 | 2008 |
| Nitride semiconductor light-emitting device and semiconductor light-emitting device T Kamikawa, P Vaccaro, S Ito US Patent App. 13/062,460, 2011 | 29 | 2011 |
| Nitride semiconductor laser device and method for fabrication thereof T Kamikawa, Y Kaneko US Patent App. 11/022,892, 2005 | 28 | 2005 |
| Electrode structure for nitride III-V compound semiconductor devices N Teraguchi, T Kamikawa US Patent 6,521,998, 2003 | 28 | 2003 |
| Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device T Kamikawa, Y Kawaguchi US Patent 7,968,898, 2011 | 26 | 2011 |
| Nitride semiconductor light-emitting device and method for fabrication thereof T Kamikawa, E Yamada, M Araki, Y Kaneko US Patent 7,903,708, 2011 | 26 | 2011 |
| Method for fabrication of semiconductor device T Kamikawa, E Yamada, M Araki US Patent 7,157,297, 2007 | 25 | 2007 |
| Method for fabricating a nitride semiconductor light-emitting device T Takakura, T Kamikawa, Y Kaneko US Patent 7,109,049, 2006 | 25 | 2006 |
| Nitride semiconductor light-emitting device having an end face coating film and method of manufacturing the same T Kamikawa, Y Kawaguchi US Patent 7,750,363, 2010 | 24 | 2010 |
| Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device T Kamikawa, Y Kawaguchi US Patent 8,319,235, 2012 | 22 | 2012 |
| Semiconductor laser diode R Sogabe, Y Kawaguchi, T Kamikawa US Patent 7,697,585, 2010 | 22 | 2010 |
