| Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2 V Talesara, Y Zhang, VGT Vangipuram, H Zhao, W Lu Applied Physics Letters 122 (12), 2023 | 13 | 2023 |
| Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8 K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao Advanced Electronic Materials, 2300550, 2023 | 8 | 2023 |
| Investigation of carbon incorporation in laser-assisted MOCVD of GaN Y Zhang, VG Thirupakuzi Vangipuram, K Zhang, H Zhao Applied Physics Letters 122 (16), 2023 | 6 | 2023 |
| 450 nm Gallium Nitride alternating current light-emitting diode M Hartensveld, B Melanson, VT Vangipuram, J Zhang IEEE Photonics Journal 12 (6), 1-6, 2020 | 5 | 2020 |
| 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management Y Xu, VGT Vangipuram, V Telasara, J Cheng, Y Zhang, T Hashimoto, ... Applied Physics Letters 123 (14), 142105, 2023 | 3 | 2023 |
| 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management Y Xu, VGT Vangipuram, V Telasara, J Cheng, Y Zhang, T Hashimoto, ... arXiv preprint arXiv:2303.15646, 2023 | 3 | 2023 |
| Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN K Zhang, C Hu, AFMAU Bhuiyan, M Zhu, VGT Vangipuram, MR Karim, ... Crystal Growth & Design 22 (8), 5004-5011, 2022 | 3 | 2022 |
| Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes K Zhang, C Hu, VG Thirupakuzi Vangipuram, K Kash, H Zhao Journal of Vacuum Science & Technology A 41 (3), 2023 | 1 | 2023 |
| Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2 VG Thirupakuzi Vangipuram, K Zhang, H Zhao Journal of Vacuum Science & Technology B 42 (3), 2024 | | 2024 |
| Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface K Zhang, VG Thirupakuzi Vangipuram, C Chae, J Hwang, H Zhao Applied Physics Letters 124 (12), 2024 | | 2024 |
| Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates VG Thirupakuzi Vangipuram, K Zhang, H Zhao physica status solidi (RRL)–Rapid Research Letters 18 (3), 2300318, 2024 | | 2024 |
| Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits K Zhang, C Hu, VG Thirupakuzi Vangipuram, L Meng, C Chae, M Zhu, ... Journal of Vacuum Science & Technology B 41 (6), 2023 | | 2023 |
| Discovery of a Robust P-Type Ultrawide Bandgap Oxide Semiconductor: LiGa K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao | | 2023 |
| Development of a Monolithically Integrated GaN Nanowire Memory Device VGT Vangipuram Rochester Institute of Technology, 2021 | | 2021 |
| Development of a Monolithically Integrated GaN Nanowire Memory Device VG Thirupakuzi Vangipuram | | 2021 |
| Fabrication of AlGaN/GaN High Electron Mobility Transistors VGT Vangipuram GaN 3 (6), 7, 0 | | |
