关注
Wantae Lim
Wantae Lim
在 samsung.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Recent advances in wide bandgap semiconductor biological and gas sensors
SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
3242010
Room temperature deposited indium zinc oxide thin film transistors
YL Wang, F Ren, W Lim, DP Norton, SJ Pearton, II Kravchenko, ...
Applied physics letters 90 (23), 2007
1852007
Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
SY Sung, JH Choi, UB Han, KC Lee, JH Lee, JJ Kim, W Lim, SJ Pearton, ...
Applied physics letters 96 (10), 2010
1712010
High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
W Lim, JH Jang, SH Kim, DP Norton, V Craciun, SJ Pearton, F Ren, ...
Applied Physics Letters 93 (8), 2008
1402008
High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering
W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of The Electrochemical Society 155 (6), H383, 2008
1402008
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 2008
1362008
High mobility InGaZnO4 thin-film transistors on paper
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 94 (7), 2009
1162009
Nitride and oxide semiconductor nanostructured hydrogen gas sensors
JS Wright, W Lim, DP Norton, SJ Pearton, F Ren, JL Johnson, A Ural
Semiconductor Science and Technology 25 (2), 024002, 2010
1012010
Hydrogen sensing with Pt-functionalized GaN nanowires
JS Wright, W Lim, BP Gila, SJ Pearton, JL Johnson, A Ural, F Ren
Sensors and Actuators B: Chemical 140 (1), 196-199, 2009
1012009
Low-voltage indium gallium zinc oxide thin film transistors on paper substrates
W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Applied Physics Letters 96 (5), 2010
952010
Stable room temperature deposited amorphous InGaZnO4 thin film transistors
W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
862008
Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes
W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ...
Applied Physics Letters 97 (24), 2010
682010
ZnO and related materials for sensors and light-emitting diodes
SJ Pearton, WT Lim, JS Wright, LC Tien, HS Kim, DP Norton, HT Wang, ...
Journal of Electronic Materials 37, 1426-1432, 2008
632008
Light-emitting diode (LED), LED package and apparatus including the same
H Yoo, YI Kim, NG Cha, W Lim, KW Hwang, S Sim, H Noh
US Patent 9,799,809, 2017
602017
Light source module, display panel, and display apparatus including the same
NG Cha, YII Kim, WT Lim
US Patent 9,825,014, 2017
592017
Growth and characterization of GaN nanowires for hydrogen sensors
JL Johnson, Y Choi, A Ural, W Lim, JS Wright, BP Gila, F Ren, SJ Pearton
Journal of electronic materials 38, 490-494, 2009
562009
Light emitting device package
YI Kim, HS Won, WT Lim, NG Cha
US Patent 10,230,021, 2019
522019
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles
SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park
Optics express 21 (3), 3138-3144, 2013
512013
Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 93 (25), 2008
492008
Comparison of neutron irradiation effects in algan/aln/gan, algan/gan, and inaln/gan heterojunctions
AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, SJ Pearton, ...
Journal of Vacuum Science & Technology B 30 (6), 2012
442012
系统目前无法执行此操作,请稍后再试。
文章 1–20