Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ... Progress in Materials Science 55 (1), 1-59, 2010 | 324 | 2010 |
Room temperature deposited indium zinc oxide thin film transistors YL Wang, F Ren, W Lim, DP Norton, SJ Pearton, II Kravchenko, ... Applied physics letters 90 (23), 2007 | 185 | 2007 |
Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors SY Sung, JH Choi, UB Han, KC Lee, JH Lee, JJ Kim, W Lim, SJ Pearton, ... Applied physics letters 96 (10), 2010 | 171 | 2010 |
High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates W Lim, JH Jang, SH Kim, DP Norton, V Craciun, SJ Pearton, F Ren, ... Applied Physics Letters 93 (8), 2008 | 140 | 2008 |
High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ... Journal of The Electrochemical Society 155 (6), H383, 2008 | 140 | 2008 |
Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ... Applied Physics Letters 93 (7), 2008 | 136 | 2008 |
High mobility InGaZnO4 thin-film transistors on paper W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ... Applied Physics Letters 94 (7), 2009 | 116 | 2009 |
Nitride and oxide semiconductor nanostructured hydrogen gas sensors JS Wright, W Lim, DP Norton, SJ Pearton, F Ren, JL Johnson, A Ural Semiconductor Science and Technology 25 (2), 024002, 2010 | 101 | 2010 |
Hydrogen sensing with Pt-functionalized GaN nanowires JS Wright, W Lim, BP Gila, SJ Pearton, JL Johnson, A Ural, F Ren Sensors and Actuators B: Chemical 140 (1), 196-199, 2009 | 101 | 2009 |
Low-voltage indium gallium zinc oxide thin film transistors on paper substrates W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ... Applied Physics Letters 96 (5), 2010 | 95 | 2010 |
Stable room temperature deposited amorphous InGaZnO4 thin film transistors W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 86 | 2008 |
Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ... Applied Physics Letters 97 (24), 2010 | 68 | 2010 |
ZnO and related materials for sensors and light-emitting diodes SJ Pearton, WT Lim, JS Wright, LC Tien, HS Kim, DP Norton, HT Wang, ... Journal of Electronic Materials 37, 1426-1432, 2008 | 63 | 2008 |
Light-emitting diode (LED), LED package and apparatus including the same H Yoo, YI Kim, NG Cha, W Lim, KW Hwang, S Sim, H Noh US Patent 9,799,809, 2017 | 60 | 2017 |
Light source module, display panel, and display apparatus including the same NG Cha, YII Kim, WT Lim US Patent 9,825,014, 2017 | 59 | 2017 |
Growth and characterization of GaN nanowires for hydrogen sensors JL Johnson, Y Choi, A Ural, W Lim, JS Wright, BP Gila, F Ren, SJ Pearton Journal of electronic materials 38, 490-494, 2009 | 56 | 2009 |
Light emitting device package YI Kim, HS Won, WT Lim, NG Cha US Patent 10,230,021, 2019 | 52 | 2019 |
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park Optics express 21 (3), 3138-3144, 2013 | 51 | 2013 |
Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ... Applied Physics Letters 93 (25), 2008 | 49 | 2008 |
Comparison of neutron irradiation effects in algan/aln/gan, algan/gan, and inaln/gan heterojunctions AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, SJ Pearton, ... Journal of Vacuum Science & Technology B 30 (6), 2012 | 44 | 2012 |