| Proper scaling of the anomalous Hall effect Y Tian, L Ye, X Jin Physical review letters 103 (8), 087206, 2009 | 499 | 2009 |
| Temperature dependence of the intrinsic anomalous Hall effect in nickel L Ye, Y Tian, X Jin, D Xiao Physical Review B 85 (22), 220403, 2012 | 113 | 2012 |
| Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures L Ye, DB Gopman, L Rehm, D Backes, G Wolf, T Ohki, AF Kirichenko, ... Journal of Applied Physics 115 (17), 2014 | 51 | 2014 |
| A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory L Lang, Y Jiang, F Lu, C Wang, Y Chen, AD Kent, L Ye Applied Physics Letters 116 (2), 2020 | 34 | 2020 |
| A cryogenic spin-torque memory element with precessional magnetization dynamics GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki Scientific reports 9 (1), 803, 2019 | 32 | 2019 |
| Enhancement of the anomalous Hall effect in Ni thin films by artificial interface modification J Xu, Y Li, D Hou, L Ye, X Jin Applied Physics Letters 102 (16), 2013 | 31 | 2013 |
| Accessing different spin-disordered states using first-order reversal curves RK Dumas, PK Greene, DA Gilbert, L Ye, C Zha, J Åkerman, K Liu Physical Review B 90 (10), 104410, 2014 | 21 | 2014 |
| A new reversal mode in exchange coupled antiferromagnetic/ferromagnetic disks: distorted viscous vortex DA Gilbert, L Ye, A Varea, S Agramunt-Puig, N Del Valle, C Navau, ... Nanoscale 7 (21), 9878-9885, 2015 | 20 | 2015 |
| Evidence of the side jump mechanism in the anomalous Hall effect in paramagnets Y Li, D Hou, L Ye, Y Tian, J Xu, G Su, X Jin Europhysics Letters 110 (2), 27002, 2015 | 13 | 2015 |
| State diagram of an orthogonal spin transfer spin valve device L Ye, G Wolf, D Pinna, GD Chaves-O'Flynn, AD Kent Journal of Applied Physics 117 (19), 2015 | 11 | 2015 |
| Field-free deterministic writing of spin-orbit torque magnetic tunneling junction by unipolar current T Yang, M Yang, L Zhao, J Gao, Q Xiang, W Li, F Luo, L Ye, J Luo IEEE Electron Device Letters 43 (5), 709-712, 2022 | 4 | 2022 |
| Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process L Zhao, M Yang, J Gao, T Yang, Y Cui, J Xu, J Li, Q Xiang, W Li, F Luo, ... IEEE Electron Device Letters 44 (3), 408-411, 2023 | 2 | 2023 |
| Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current T Yang, M Yang, L Zhao, J Gao, Q Xiang, W Li, F Luo, L Ye, J Luo arXiv preprint arXiv:2111.11833, 2021 | | 2021 |
| Coherent spin-transfer precession switching in orthogonal spin-torque devices GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki arXiv preprint arXiv:1711.10575, 2017 | | 2017 |
| Coherent spin-transfer precession switching in orthogonal spin-torque devices C Ryan, G Rowlands, D Pinna, L Ye, L Rehm, V Sluka, A Kent, T Ohki APS March Meeting Abstracts 2016, P18. 007, 2016 | | 2016 |
| Bipolar switching in an orthogonal spin transfer spin valve device L Ye, G Wolf, D Pinna, GD Chaves, AD Kent arXiv preprint arXiv:1408.4494, 2014 | | 2014 |
Andrew D KentNew York University在 nyu.edu 的电子邮件经过验证
