John C. Bean 个人学术档案 - 学术资源搜索

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引用	23853	1716
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Leonard FeldmanProfessor of Physics and Materials Science在 rutgers.edu 的电子邮件经过验证
J. Murray GibsonProfessor of Mechanical Engineering在 eng.famu.fsu.edu 的电子邮件经过验证
T.P. PearsallEPIC在 ieee.org 的电子邮件经过验证
Raymond T. TungBrooklyn College, Bell Labs在 brooklyn.cuny.edu 的电子邮件经过验证
Joe CampbellProfessor Electrical and Computer Engineering, University of Virginia在 virginia.edu 的电子邮件经过验证
Ian RobinsonBrookhaven Lab在 ucl.ac.uk 的电子邮件经过验证
Abbas OurmazdDistinguished Professor of Physics在 uwm.edu 的电子邮件经过验证
Serge LuryiDistinguished Professor of Electrical Engineering, Stony Brook University在 stonybrook.edu 的电子邮件经过验证
Colin HumphreysQueen Mary University of London在 qmul.ac.uk 的电子邮件经过验证
James M. TourProfessor, Rice University, Department of Chemistry, Materials Science and NanoEngineering, and在 rice.edu 的电子邮件经过验证
eric p kvamProfessor, Materials Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
Thomas VanderveldeTufts University在 ece.tufts.edu 的电子邮件经过验证
George K CellerProfessor of Materials Science, Rutgers University在 rci.rutgers.edu 的电子邮件经过验证
Anders OlssonPearl Laboratories在 pearllaboratories.com 的电子邮件经过验证
Rudolf TrompIBM T.J. Watson Research Center / Leiden University在 us.ibm.com 的电子邮件经过验证
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National Laboratory在 bnl.gov 的电子邮件经过验证
Mircea R. StanVirginia Microelectronics Consortium (VMEC) Professor, University of Virginia在 virginia.edu 的电子邮件经过验证
Jerry TersoffIBM在 us.ibm.com 的电子邮件经过验证
Nathan SwamiProfessor, University of Virginia, Charlottesville, VA在 virginia.edu 的电子邮件经过验证
Garrett S. RoseProfessor, University of Tennessee在 utk.edu 的电子邮件经过验证

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John C. Bean

Stanford University OR Bell Labs OR University of Virginia OR WeCanFigureThisOut.org

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Semiconductor nanostructures MBE SiGe Sustainable Energy Education


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Magnetization of hard superconductors CP Bean Physical review letters 8 (6), 250, 1962	5587	1962
Calculation of critical layer thickness versus lattice mismatch for Ge_xSi_1−x/Si strained‐layer heterostructures R People, JC Bean Applied Physics Letters 47 (3), 322-324, 1985	2462	1985
Ge_xSi_1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984	1011	1984
Band alignments of coherently strained Ge_xSi_1−x/Si heterostructures on <001> Ge_ySi_1−y substrates R People, JC Bean Applied physics letters 48 (8), 538-540, 1986	464	1986
Measurement of the band gap of GexSi1− x/Si strained‐layer heterostructures DV Lang, R People, JC Bean, AM Sergent Applied Physics Letters 47 (12), 1333-1335, 1985	447	1985
Modulation doping in Ge_xSi_1−x/Si strained layer heterostructures R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ... Applied Physics Letters 45 (11), 1231-1233, 1984	398	1984
Silicon-based semiconductor heterostructures: column IV bandgap engineering JC Bean Proceedings of the IEEE 80 (4), 571-587, 1992	354	1992
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors DH Auston, AM Johnson, PR Smith, JC Bean Applied Physics Letters 37 (4), 371-373, 1980	348	1980
Observation of order-disorder transitions in strained-semiconductor systems A Ourmazd, JC Bean Physical review letters 55 (7), 765, 1985	312	1985
Pseudomorphic growth of Ge_xSi₁₋_x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984	309	1984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff Physical Review B 53 (24), 16334, 1996	302	1996
Raman scattering from Ge_xSi_1−x/Si strained‐layer superlattices F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson Applied physics letters 45 (10), 1138-1140, 1984	292	1984
GexSi1− x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986	290	1986
Misfit dislocations in lattice-mismatched epitaxial films R Hull, JC Bean Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992	289	1992
Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson Thin Solid Films 93 (1-2), 77-90, 1982	260	1982
New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984	242	1984
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon JC Bean, GE Becker, PM Petroff, TE Seidel Journal of Applied Physics 48 (3), 907-913, 1977	241	1977
Growth of single‐crystal CoSi₂ on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982	237	1982
Stability of semiconductor strained‐layer superlattices R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson Applied physics letters 48 (1), 56-58, 1986	202	1986
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	197	1989

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