| Tunneling spectroscopy of the Si (111) 2× 1 surface RM Feenstra, JA Stroscio, AP Fein Surface science 181 (1-2), 295-306, 1987 | 869 | 1987 |
| Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy JA Stroscio, RM Feenstra, AP Fein Physical review letters 57 (20), 2579, 1986 | 810 | 1986 |
| Atom-selective imaging of the GaAs (110) surface RM Feenstra, JA Stroscio, J Tersoff, AP Fein Physical Review Letters 58 (12), 1192, 1987 | 788 | 1987 |
| Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors RM Feenstra Physical Review B 50 (7), 4561, 1994 | 543 | 1994 |
| Tunneling spectroscopy of the GaAs (110) surface RM Feenstra, JA Stroscio Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 536 | 1987 |
| Reconstructions of the GaN (000 1) surface AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup Physical review letters 79 (20), 3934, 1997 | 442 | 1997 |
| Structure of GaN (0001): The laterally contracted Ga bilayer model JE Northrup, J Neugebauer, RM Feenstra, AR Smith Physical Review B 61 (15), 9932, 2000 | 425 | 2000 |
| Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998 | 407 | 1998 |
| Adatom kinetics on and below the surface: The existence of a new diffusion channel J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ... Physical Review Letters 90 (5), 056101, 2003 | 383 | 2003 |
| Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998 | 316 | 1998 |
| Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface JA Stroscio, RM Feenstra, AP Fein Physical review letters 58 (16), 1668, 1987 | 306 | 1987 |
| Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1 RM Feenstra, WA Thompson, AP Fein Physical review letters 56 (6), 608, 1986 | 297 | 1986 |
| Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy P Mårtensson, RM Feenstra Physical Review B 39 (11), 7744, 1989 | 294 | 1989 |
| Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999 | 273 | 1999 |
| Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve Journal of Electronic Materials 27 (4), 308-312, 1998 | 265 | 1998 |
| Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs RM Feenstra, JM Woodall, GD Pettit Physical review letters 71 (8), 1176, 1993 | 259 | 1993 |
| Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988 | 254 | 1988 |
| Graphene nucleation density on copper: fundamental role of background pressure I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ... The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013 | 250 | 2013 |
| Influence of misfit dislocations on the surface morphology of Si1−xGex films MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu Applied Physics Letters 66 (6), 724-726, 1995 | 240 | 1995 |
| Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2 C Zhang, Y Chen, A Johnson, MY Li, LJ Li, PC Mende, RM Feenstra, ... Nano letters 15 (10), 6494-6500, 2015 | 237 | 2015 |
Jörg NeugebauerDirector, Max-Planck-Institut für Eisenforschung在 mpie.de 的电子邮件经过验证
