| Raman spectra of size-selected silicon clusters and comparison with calculated structures EC Honea, A Ogura, CA Murray, K Raghavachari, WO Sprenger, ... Nature 366 (6450), 42-44, 1993 | 492 | 1993 |
| Semiconductor device A Ogura, K Egami US Patent 4,643,950, 1987 | 244 | 1987 |
| UV-Raman spectroscopy system for local and global strain measurements in Si A Ogura, K Yamasaki, D Kosemura, S Tanaka, I Chiba, R Shimidzu Japanese journal of applied physics 45 (4S), 3007, 2006 | 114 | 2006 |
| Structures and coalescence behavior of size-selected silicon nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy EC Honea, A Ogura, DR Peale, C Felix, CA Murray, K Raghavachari, ... The Journal of chemical physics 110 (24), 12161-12172, 1999 | 109 | 1999 |
| Sub-10-nm planar-bulk-CMOS devices using lateral junction control H Wakabayashi, S Yamagami, N Ikezawa, A Ogura, M Narihiro, KI Arai, ... IEEE International Electron Devices Meeting 2003, 20.7. 1-20.7. 3, 2003 | 104 | 2003 |
| Gas source silicon molecular beam epitaxy using silane H Hirayama, T Tatsumi, A Ogura, N Aizaki Applied physics letters 51 (26), 2213-2215, 1987 | 100 | 1987 |
| Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura Applied Physics Express 10 (8), 081501, 2017 | 87 | 2017 |
| Silicon-on-insulator (SOI) substrate and method of fabricating the same A Ogura US Patent 6,211,041, 2001 | 81 | 2001 |
| Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon R Koh, A Ogura US Patent 5,427,976, 1995 | 77 | 1995 |
| Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura Microelectronic Engineering 215, 111013, 2019 | 76 | 2019 |
| Soi mosfet R Koh, S Yamagami, J Lee, H Wakabayashi, Y Saito, A Ogura, M Narihiro, ... US Patent 6,933,569, 2005 | 76 | 2005 |
| Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same K Takeuchi, K Terashima, H Wakabayashi, S Yamagami, A Ogura, ... US Patent 7,612,416, 2009 | 71 | 2009 |
| HfO2 growth by low-pressure chemical vapor deposition using the Hf (N (C2H5) 2) 4/O2 gas system Y Ohshita, A Ogura, A Hoshino, S Hiiro, H Machida Journal of crystal growth 233 (1-2), 292-297, 2001 | 70 | 2001 |
| Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods A Ogura US Patent 7,605,443, 2009 | 67 | 2009 |
| Skeletal muscle loss is an independent negative prognostic factor in patients with advanced lower rectal cancer treated with neoadjuvant chemoradiotherapy Y Takeda, T Akiyoshi, K Matsueda, H Fukuoka, A Ogura, H Miki, Y Hiyoshi, ... PloS one 13 (4), e0195406, 2018 | 62 | 2018 |
| Improvement in ferroelectricity of HfxZr1− xO2 thin films using top-and bottom-ZrO2 nucleation layers T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura APL Materials 7 (6), 2019 | 60 | 2019 |
| Semiconductor device having fin-type effect transistor K Takeuchi, K Watanabe, K Terashima, A Ogura, T Tatsumi, K Takeda, ... US Patent App. 10/569,451, 2007 | 59 | 2007 |
| Characterization of structures by micro-Raman imaging S Nakashima, T Yamamoto, A Ogura, K Uejima, T Yamamoto Applied physics letters 84 (14), 2533-2535, 2004 | 59 | 2004 |
| Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition Y Ohshita, A Ogura, A Hoshino, S Hiiro, T Suzuki, H Machida Thin Solid Films 406 (1-2), 215-218, 2002 | 59 | 2002 |
| Semiconductor device and manufacturing process therefor K Terashima, K Takeuchi, S Yamagami, H Wakabayashi, A Ogura, ... US Patent App. 10/576,412, 2007 | 58 | 2007 |
Tomihisa TachibanaAIST在 aist.go.jp 的电子邮件经过验证
