| Microwave filters with improved stopband based on sub-wavelength resonators J Garcia-Garcia, F Martín, F Falcone, J Bonache, JD Baena, I Gil, E Amat, ... IEEE Transactions on Microwave theory and techniques 53 (6), 1997-2006, 2005 | 260 | 2005 |
| Reliability challenges in design of memristive memories P Pouyan, E Amat, A Rubio 2014 5th European Workshop on CMOS Variability (VARI), 1-6, 2014 | 61 | 2014 |
| Channel Hot-Carrier Degradation in Short-Channel Transistors With High- /Metal Gate Stacks E Amat, T Kauerauf, R Degraeve, A De Keersgieter, R Rodriguez, ... IEEE Transactions on Device and Materials reliability 9 (3), 425-430, 2009 | 57 | 2009 |
| Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures E Amat, T Kauerauf, R Degraeve, R Rodriguez, M Nafria, X Aymerich, ... IEEE Transactions on Device and Materials Reliability 9 (3), 454-458, 2009 | 53 | 2009 |
| Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack E Amat, T Kauerauf, R Degraeve, R Rodríguez, M Nafría, X Aymerich, ... Microelectronic Engineering 87 (1), 47-50, 2010 | 46 | 2010 |
| UTBB FDSOI technology flexibility for ultra low power internet-of-things applications E Beigné, JF Christmann, A Valentian, O Billoint, E Amat, D Morche 2015 45th European Solid State Device Research Conference (ESSDERC), 164-167, 2015 | 36 | 2015 |
| Memristive crossbar memory lifetime evaluation and reconfiguration strategies E Amat, A Rubio IEEE Transactions on Emerging Topics in Computing 6 (2), 207-218, 2016 | 34 | 2016 |
| Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters J Martin-Martinez, S Gerardin, E Amat, R Rodriguez, M Nafria, X Aymerich, ... IEEE Transactions on Electron Devices 56 (9), 2155-2159, 2009 | 31 | 2009 |
| Exploring the influence of variability on single-electron transistors into SET-based circuits E Amat, J Bausells, F Perez-Murano IEEE Transactions on Electron Devices 64 (12), 5172-5180, 2017 | 26 | 2017 |
| A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics E Amat, T Kauerauf, R Rodríguez, M Nafría, X Aymerich, R Degraeve, ... Microelectronic engineering 103, 144-149, 2013 | 26 | 2013 |
| Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs D Maji, F Crupi, E Amat, E Simoen, B De Jaeger, DP Brunco, CR Manoj, ... IEEE transactions on electron devices 56 (5), 1063-1069, 2009 | 25 | 2009 |
| RRAM variability and its mitigation schemes P Pouyan, E Amat, S Hamdioui, A Rubio 2016 26th international workshop on power and timing modeling, optimization …, 2016 | 24 | 2016 |
| Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime P Pouyan, E Amat, A Rubio 2012 IEEE 30th VLSI Test Symposium (VTS), 240-245, 2012 | 24 | 2012 |
| Gate Voltage Influence on the Channel Hot-Carrier Degradation of High- -Based Devices E Amat, T Kauerauf, R Degraeve, R Rodríguez, M Nafría, X Aymerich, ... IEEE Transactions on Device and Materials Reliability 11 (1), 92-97, 2010 | 23 | 2010 |
| Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions E Amat, R Rodríguez, M Nafría, X Aymerich, JH Stathis Microelectronics Reliability 47 (4-5), 544-547, 2007 | 21 | 2007 |
| Statistical lifetime analysis of memristive crossbar matrix P Pouyan, E Amat, A Rubio 2015 10th International Conference on Design & Technology of Integrated …, 2015 | 20 | 2015 |
| SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET A Calomarde, E Amat, F Moll, J Vigara, A Rubio Microelectronics Reliability 54 (4), 738-745, 2014 | 16 | 2014 |
| Feasibility of embedded DRAM cells on FinFET technology E Amat, A Calomarde, F Moll, R Canal, A Rubio IEEE Transactions on Computers 65 (4), 1068-1074, 2014 | 15 | 2014 |
| Influence of quantum dot characteristics on the performance of hybrid SET-FET circuits E Amat, F Klüpfel, J Bausells, F Perez-Murano IEEE Transactions on Electron Devices 66 (10), 4461-4467, 2019 | 13 | 2019 |
| Systematic and random variability analysis of two different 6T-SRAM layout topologies E Amat, E Amatllé, S Gómez, N Aymerich, CG Almudéver, F Moll, A Rubio Microelectronics Journal 44 (9), 787-793, 2013 | 13 | 2013 |
Antonio RubioProfessor of Electrical Engineering (UPC)在 upc.edu 的电子邮件经过验证
Antonio RubioProfessor of Electrical Engineering (UPC)在 upc.edu 的电子邮件经过验证
Robin Degraeveimec在 imec.be 的电子邮件经过验证
Francesc Perez-MuranoIMB-CNM, CSIC在 csic.es 的电子邮件经过验证